Comparison of Fitting Current–Voltage Characteristics Curves of FinFET Transistors with Various Fixed Parameters

Abstract

In the deep submicron regime, FinFET successfully suppresses the leakage current using a 3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate is applied with a bias wholly wrapping the channel. Fortunately, a scanning photo-lithography using extensive ultraviolet (EUV) and multi-mask task carefully resolves critical dimension issues. The ensuing anisotropic plasma dry etching is somehow a subsequent challenging process, which consumes the edge of original ‘I’-shape epitaxial silicon and causes dimension loss, and thus produces fin-like bodies as prepared channels. In order to protect the transistors from malfunction due to dimension over-etching, fin width is taken to be 120 nanometers, while the channel lengths vary. The prepared transistors are measured and characteristic curves are fitted for analysis. Measured current versus voltage characteristic curves are fitted with three parameters (transistor geometry constant, threshold voltage, and Early voltage) in the conventional current-voltage formula , which are allowed to vary as the short channel effects or process-related issues are taken into account. In this paper, one of the three is deliberately set to be fixed for a transistor, and the others are freely chosen and determined to reach minimum variation. Various conclusions through comparisons and analysis may give important feasible applications in the future.

Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects

“…The parameters are easily determined if the parameters are not required to keep the same. Instead, the trends or scales of some specific parameters always give some information [16,17]. Moreover, the kink effects really exist, as referred to Figure 4a,b, for the 0.18-micron process, where the determined parameters for characteristic curves are listed in Table 1, as well as Figure 6a,b for the 0.09-micron process, where the determined parameters for characteristic curves are listed in Table 2.…”

“…For example, the final value of k N is determined to be 1.49 × 10 −4 (A/V 2 ) through the smiling curve as the minimum delta is located in Figure 2 [16,17].…”

Promising Algorithm Addressing the Mechanism and Charac-teristic Curves of Insulated Gated Bipolar Transistor (IGBT)

“…Referring to the kinks proposed in [14], electrons and holes travel through the periodic diamond structure and posses the potential energy density V(e)=(a/b)[1-cos(be)], where V(e) is thought to be non-negative. Also, carriers like electrons and holes are fermions, which are expressed by wave function as with obeying Fermi-Dirac statistics while the moving fermion scalar field, , refers to the nonlinear sine-Gordon equation [15] as follows:…”

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

“…where VA is Early voltage, Cox (1) is gate oxide capacitance per square meter, Lo is channel length,  is the mobility of carriers, and Weff=19Wo (Wo, fin width), and where  (V -1 ) is the kink width adjustment. [16][17][18][19][20][21] Equation (1) or Equation (2) work as VDS is less than or larger than (VGS-Vth), respecitvely. And those parameters, (kN, Vth, , , , ), are deliberately determined to minimize the delta () as follows in Equation (3):…”