Comparison of GaInNAs Laser Diodes Based on Two to Five Quantum Wells

Gollub, D.; Moses, S. E. Allen; Forchel, A.

doi:10.1109/jqe.2004.825112

Cited by 22 publications

(8 citation statements)

References 15 publications

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“…Though these results are still inferior compared to their GaInNAs QW counterparts [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] and In(Ga)As QD lasers [49][50][51][52][53], however, the results in this work indicate that GaInNAs QDs have potential for longwavelength semiconductor laser application. Further improvement and optimization in the GaInNAs QD material growth are on-going for better crystal quality, higher GaInNAs QD densities and longer wavelength.…”

Section: Resultsmentioning

confidence: 87%

“…So far, GaInNAs QW laser performance has been improved significantly [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Both GaInNAs FabryPerot edge-emitting lasers [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] and VCSELs [19] have been realized. For edge-emitting 1.3-lm GaInNAs lasers, Tansu et al [14] reported the lowest transparency current density (J tr ) of 75-80 A/cm 2 from structures grown by metal organic chemical vapor deposition (MOCVD); Wang et al [11] recently reported J tr of 84 A/cm 2 from 1.3-lm GaInNAs lasers, grown using molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

“…Photoluminescence (PL) emission in the 1.3 lm and 1.5 lm region from MBE-grown GaInNAs QDs has been observed [23]. However, compared with a large amount of research on GaInNAs QW lasers [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19], relatively fewer results on GaInNAs QD lasers have been reported [30,31,38]. Makino et al first reported pulsed lasing from a CBE-grown Ga 0.5 In 0.5 N 0.01 As 0.99 QD laser at 77 K at emission wavelength of 1.02 lm and threshold current density (J th ) of 1.9 kA/cm 2 [31].…”

Section: Introductionmentioning

confidence: 99%

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Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

et al. 2006

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Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solidsource molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is~1.05 kA/cm 2 from a GaInNAs QD laser (50 · 1,700 lm 2 ) at 10°C. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 · 1,060 lm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60°C.

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Section: Resultsmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

et al. 2006

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“…Low threshold currents, high values of the characteristic temperature of the threshold current (T 0 ) and high speed modulation at elevated temperatures have been demonstrated during recent years in the wavelength range 1260 -1340 nm [1][2][3][4][5][6][7][8][9][10].…”

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confidence: 99%

1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth

et al. 2009

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The emission wavelength of a GaInNAs quantum well (QW) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of QW composition and thickness and N concentration in the barriers. A triple QW design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. High speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 GHz.Introduction: GaInNAs quantum well (QW) lasers emitting at 1310 nm, the zero dispersion wavelength of standard singlemode fibres, are promising light sources for temperature insensitive optical transmitters in local and metro area networks. Low threshold currents, high values of the characteristic temperature of the threshold current (T 0 ) and high speed modulation at elevated temperatures have been demonstrated during recent years in the wavelength range 1260 -1340 nm [1][2][3][4][5][6][7][8][9][10].For applications in high speed optical communication links and networks, the dynamics of the laser is of utmost importance. In particular, the modulation bandwidth should be sufficiently large to enable direct current modulation at high data rates. In the 1.3 mm range, GaInNAs QW lasers emitting at relatively short wavelengths have attained the largest modulation bandwidths, whereas for lasers emitting at longer wavelengths the maximum modulation bandwidth is inversely proportional to the emission wavelength. This is exemplified by a record modulation bandwidth of 17 GHz for a 1264 nm double QW laser [11], a 13.8 GHz bandwidth for a 1295 nm double QW laser [12] and a 9.7 GHz bandwidth for a 1346 nm triple QW laser [13]. This dependency of the bandwidth on wavelength has its origin in the physics of the gain medium. At the shorter wavelengths, the lasers employ QWs with large In and small N concentrations for high material quality (high radiative efficiency) and low threshold current. Such QWs are heavily strained which provides high differential gain. By simply increasing the N concentration in the QWs the wavelength can be extended towards the optimum wavelength of 1310 nm. However, an increase in the concentration of N leads to a reduction of the differential gain through an increased electron effective mass, a reduced matrix element and reduced strain [14]. In addition, the inhomogeneous broadening increases which further reduces the differential gain. Increasing the concentration of N may also have an effect on carrier transport which can lower the differential gain [15]. The emission wavelength can also be extended by increasing the QW thickness and/or introducing N in the barriers to effectively reduce the height of the potential barriers in the conduction band. However, this not only reduces the effective bandgap but also lowers the energies of the second confined subband and the barrier states with respect to the ground state. This leads to an in...

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“…However, too high a concentration of nitrogen tends to degrade the optical quality of the material [1]. Optical properties of GaInNAs alloy can be partly improved by having a tight control over the growth conditions [2], rapid thermal annealing [3] or using multiple quantum wells [4]. In undoped quantum wells temperature dependent photoluminescence has the typical exciton trapping characteristics that gives the well known S-shape behaviour [5].…”

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confidence: 99%

Photoluminescence studies in modulation doped GaInNAs/GaAs multiple quantum wells

Yılmaz

Uluğ

Ulug

et al. 2007

Phys. Status Solidi (c)

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We report for the first time the temperature dependent PL spectra from GaInNAs/GaAs triple quantum wells, modulation doped with a 2-D carrier density of ~3x10 11 cm -2 per well. The measurements were carried out at temperatures between 10 and 300K. The results are analyzed using a Gaussian fitting technique which indicates variable nitrogen composition and/or well-width fluctuations in the wells. One of the most striking features of the results is the lack of the S-Shape temperature dependence of the PL peak energy that is commonly observed in undoped dilute nitride quantum wells and is attributed to exciton detrapping, which screens the true temperature dependence of the energy gap. Our results compare well with the predictions of the Varshni equation. The temperature dependence of the PL intensity is used to obtain the thermally activated behaviour of the non-radiative recombination processes that appear to dominate at higher temperatures. 1 Introduction Recent developments in communication technology have been stimulating an increasing demand on fast data transmission and high capacity devices operating in this area. Current devices are far from meeting the growing demand. Hence, an enormous research effort has been devoted for the development of alternative materials particularly for the 1.3 µm window of the optical-fiber communications. GaInNAs alloy is one such material system where increased nitrogen incorporation results in large band gap bowing and hence reduced band gap. However, too high a concentration of nitrogen tends to degrade the optical quality of the material [1]. Optical properties of GaInNAs alloy can be partly improved by having a tight control over the growth conditions [2], rapid thermal annealing [3] or using multiple quantum wells [4]. In undoped quantum wells temperature dependent photoluminescence has the typical exciton trapping characteristics that gives the well known S-shape behaviour [5]. Therefore experimental observation of the temperature dependence of the true band gap of dilute nitrides is not possible at low temperatures. In order to overcome this problem we have introduced modulation doping resulting in the elevation of the Fermi level, hence in the screening of the exciton trapping effects. Therefore, it was possible to observe directly a true temperature dependence of the band gap.

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Comparison of GaInNAs Laser Diodes Based on Two to Five Quantum Wells

Cited by 22 publications

References 15 publications

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth

Photoluminescence studies in modulation doped GaInNAs/GaAs multiple quantum wells

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