Comparison of GaN p-i-n and Schottky rectifier performance

Zhan, Alan; Dang, G.; Ren, F.; Cho, Hyun; Lee, Kyu‐Pil; Pearton, S. J.; Chyi, J. I.; Nee, T.-Y.; Chuo, Chang-Cheng

doi:10.1109/16.906427

Cited by 72 publications

(29 citation statements)

References 15 publications

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“…From the figure, the adjusted coefficients within the specified zone give the breakdown voltage at 500 V, which is in close agreement with the device in [18]. If the default coefficient and critical field are used, the breakdown voltage is simulated at 1700 V. By adjusting critical field depending on GaN defect density (the higher the defect density, the lower the critical field number should be) and drift region thickness (the thicker the epi drift region, the lower the critical field number should be), the simulation methodology can be applied to other GaN devices.…”

Section: B Gan P-n Diodesupporting

confidence: 79%

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

Wei¹,

Liang

Samudra³

2012

Journal of Power Electronics

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This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

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Section: B Gan P-n Diodesupporting

confidence: 79%

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

Wei¹,

Liang

Samudra³

2012

Journal of Power Electronics

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“…Most of the GaN Shottky power diodes reported up to now are either lateral or quasi-vertical structures [18]. Anyway, these lateral devices exhibit a breakdown voltage as high as 9.7 kV obtained on Sapphire substrates although the forward voltage drop is still high.…”

Section: B Gallium Nitride Devicesmentioning

confidence: 99%

Energy saving by power electronics: towards a new concept of renewable source

Vitale¹

2016

REPQJ

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Abstract.The use of fossil sources has been increasing the excess of carbon dioxide (CO 2 ) emission in the atmosphere since the last century with detrimental to the weather. Renewable Energy Sources (RESs) appear a valid solution to mitigate CO 2 emissions but their growth is still too small compared to fossil sources, for this reason they need to be sustained by available technologies. Among these, the use of More Power Electronics (MPE) for electrical energy conversion leads to increase efficiency conversion and the investment is compensated in few time both for new equipment and retrofitting. The saved energy meets the definition of renewable energy. The whole amount of the energy saving potential achievable by MPE is comparable to the electric energy generated by the installed renewable sources.

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“…Thus, GaN appears to be an excellent choice for high-power electronics for use in hybrid electric vehicles, power conditioning in large industrial motors, and power distribution and switching. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The Johnson and Baliga power figure-of-merits for both GaN and SiC are several orders of magnitude larger for these applications than is Si. Schottky rectifiers are attractive because of their fast switching speed, which is important for improving the efficiency of inductive motor controllers and power supplies and also their low turn-on voltages compared to p-n junction rectifiers.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13] The attributes of GaN relative to Si, which also apply to SiC rectifiers, [14][15][16][17][18][19][20][21][22][23][24] include having a maximum electric-field breakdown strength an order of magnitude larger at a given on-state resistance (R ON ), while the on-state resistance is approximately 400 times lower at a given voltage. Thus, GaN appears to be an excellent choice for high-power electronics for use in hybrid electric vehicles, power conditioning in large industrial motors, and power distribution and switching.…”

Section: Introductionmentioning

confidence: 99%

Design of edge termination for GaN power Schottky diodes

LaRoche

Ren

Baik

et al. 2005

Journal of Elec Materi

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The GaN Schottky diodes capable of operating in the 300-700-V range with low turn-on voltage (0.7 V) and forward conduction currents of at least 10 A at 1.4 V (with corresponding forward current density of 500 A/cm 2 ) are attractive for applications ranging from power distribution in electric/hybrid electric vehicles to power management in spacecraft and geothermal, deep-well drilling telemetry.A key requirement is the need for edge-termination design to prevent premature breakdown because of field crowding at the edge of the depletion region. We describe the simulation of structures incorporating various kinds of edge termination, including dielectric overlap and ion-implanted guard rings. Dielectric overlap using 5-µm termination of 0.1-0.2-µm-thick SiO 2 increases the breakdown voltage of quasi-vertical diodes with 3-µm GaN epi thickness by a factor of ϳ2.7. The use of even one p-type guard ring produces about the same benefit as the optimized dielectric overlap termination.

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Comparison of GaN p-i-n and Schottky rectifier performance

Cited by 72 publications

References 15 publications

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

Energy saving by power electronics: towards a new concept of renewable source

Design of edge termination for GaN power Schottky diodes

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