Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET

Zhu, Shengnan; Liu, Tianshi; Shi, Limeng; Jin, Michael; Maddi, Hema Lata Rao; White, M.H.; Agarwal, Anant

doi:10.1109/wipda49284.2021.9645100

Cited by 10 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The existence of a failure mechanism related to the tunneling current was found to be compatible with another evaluation method, charge-to-breakdown, which relies on the evaluation of the total charge flown through the gate-stack before reaching device breakdown [49]. In this case, a constant-current stress is applied to the gate and the charge-to-breakdown is then defined as the integral of the current until breakdown time [48], or the stress current multiplied by the time-to-breakdown.…”

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 57%

“…A critical reliability aspect for SiC MOSFETs is represented by the breakdown of the gate oxide. There are two physical interpretations for such kind of failure [48]. The first one, which is field-driven, consists in the weakening of chemical bonds under the effect of an external field.…”

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

“…In some cases, charge-to-breakdown can lead to an overestimation of oxide lifetime [48], but this problem is present also in the TDDB-based approach, where whole generation and trapping at high fields can lead to a premature failure, and therefore to overestimation of the lifetime at low fields [48]. Also, electron trapping during tests can relax the field on the oxide, further contributing to the aforementioned overestimation [50].…”

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

See 2 more Smart Citations

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis of different commercially available GaN and SiC power transistors, we describe the state-of-the-art of these technologies, highlighting the preferential power conversion topologies and the key characteristics of each technological platform. Current and future fields of application for GaN and SiC devices are also reviewed. The article also reports on the main reliability aspects related to both technologies. For GaN HEMTs, threshold voltage stability, dynamic ON-resistance, and breakdown limitation are described, whereas for SiC MOSFETs the analysis also focuses on gate oxide failure and short-circuit (SC) robustness. Finally, we give an overview on the perspective of such materials in different fields of interest. An indication of possible future improvements and developments for both technologies is drawn. The requirements for hybrid converters, along with Manuscript

show abstract

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 57%

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

Section: E Gate Oxide Failure In Sic Mosfetsmentioning

confidence: 99%

See 1 more Smart Citation

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…model [31]. This will also provide a theoretical basis for suggesting the industry adopt more aggressive screening methods to more effectively screen out extrinsic defects in thermal gate oxide according to the more optimistic lifetime prediction [32].…”

Section: Devices Under Test (Duts)mentioning

confidence: 96%

“…The high match between the extracted Q BD and the Q BD model indicates that different stress methods do not change the failure mechanism of thermal gate oxide, and the existence of a specific Q BD that causes the thermal gate oxide to fail under different stress methods further proves that charge-driven breakdown is the failure mechanism of thermal gate oxide. Additionally, the lifetime prediction model established based on this failure mechanism can be considered more credible even if it is not as conservative as the thermochemical E model [31]. This will also provide a theoretical basis for suggesting the industry adopt more aggressive screening methods to more effectively screen out extrinsic defects in thermal gate oxide according to the more optimistic lifetime prediction [32].…”

Section: Introductionmentioning

confidence: 99%

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Qian,

Shi,

Jin

et al. 2024

Materials

Self Cite

View full text Add to dashboard Cite

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO2) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope β. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified. In this work, the charge-to-breakdown (QBD) of the thermal gate oxide in a type of commercial planar SiC power MOSFETs, under the constant current stress (CCS), constant voltage stress (CVS), and pulsed voltage stress (PVS) are extracted, respectively. A mathematical electron trapping model in thermal SiO2 grown on single crystal silicon (Si) under CCS, which was proposed by M. Liang et al., is proven to work equally well with thermal SiO2 grown on SiC and used to deduce the QBD model of the device under test (DUT). Compared with the QBD obtained under the three stress conditions, the charge-driven breakdown mechanism is validated in the thermal gate oxide of SiC power MOSFETs.

show abstract

Oxide Failures in SiC Power MOSFETs

Wehri,

Godbold,

Schlegel

et al. 2023

2023 IEEE Energy Conversion Congress and Exposition (ECCE)

View full text Add to dashboard Cite

Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET

Cited by 10 publications

References 9 publications

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Oxide Failures in SiC Power MOSFETs

Contact Info

Product

Resources

About