Comparison of high temperature thermal stabilities of Ru and RuO2 Schottky contacts to GaAs

Kim, Yong Tae; Lee, Chang Woo; Kwak, Sung Kwan

doi:10.1063/1.115450

Cited by 9 publications

(8 citation statements)

References 5 publications

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“…However, not too many conducting metal nitrides exist that meet the 5eV workfunction requirement. Many conducting metal oxides, on the other hand, have workfunctions near 5eV [3]. Thin films of transition metal oxides such as ruthenium oxide, RuO , and iridium oxide, IrO , not only have large workfunctions ( 5 eV), but also very low resistivity and excellent thermal/chemical stability [4]- [10].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS

Zhong

Heuss

Misra

2000

IEEE Electron Device Lett.

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The rutile stoichiometric phase of RuO 2 , deposited via reactive sputtering, was evaluated as a gate electrode for Si-PMOS devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400 C and 600 C in N 2 . X-ray diffraction patterns were measured to study grain structure and interface reactions. Very low resistivity values were observed and were found to be a strong function of temperature. Electrical properties were evaluated on MOS capacitors, which indicated that the workfunction of RuO 2 was compatible with PMOS devices. Excellent stability of oxide thickness, flatband voltage and gate current as a function of temperature was also found. Breakdown fields were also measured for the samples before and after annealing.

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Section: Introductionmentioning

confidence: 99%

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS

Zhong

Heuss

Misra

2000

IEEE Electron Device Lett.

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“…7,8 Furthermore, because of excellent thermal stability, RuO 2 has also been proposed to serve as a potential electrode on GaAs and SiC for high temperature Schottky contact devices. 9,10 As an alternative gate electrode for integration with high-ZrO 2 and Zr silicate dielectrics in PMOS devices, excellent stability and electric properties indicated that RuO 2 is a promising candidate for implementation in PMOS devices. 11,12 However, detailed information on the work function of conductive oxides relating to the oxidation state is very limited.…”

mentioning

confidence: 99%

Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system

Wang

et al. 2004

Applied Physics Letters

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Conductive oxides RuOx as alternative electrode on high-κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx∕HfO2∕Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2∕Si are determined to be 3.05±0.1 and 1.48±0.1eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95–2.73eV.

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“…9,10 The work function of IrO x ͑Ͼ5.0 eV͒ is higher than that of ITO ͑ϳ4.7 eV͒. 11 Thus, it is expected that the interfacial layer of IrO x between ITO anodes and organic materials could improve the injection of holes via enhanced OLED electrical properties.…”

mentioning

confidence: 99%

Enhancement of hole injection using iridium-oxide-coated indium tin oxide anodes in organic light-emitting diodes

Kim

Lee

Kim³

et al. 2005

Applied Physics Letters

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We report the enhancement of hole injection using an IrOx layer between indium tin oxide anodes and 4,4’-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl in organic light-emitting diodes (OLEDs). The turn-on voltage of OLEDs decreased from 7V to 4V and the maximum luminescence value increased from 1200cd∕m2 to 1800cd∕m2 as the Ir layer changed to IrOx by surface treatment using O2 plasma. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased by 0.6eV as the Ir layer transformed into IrOx. Thus, the hole injection energy barrier was lowered, reducing the turn-on voltage and increasing the quantum efficiency of OLEDs.

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Comparison of high temperature thermal stabilities of Ru and RuO2 Schottky contacts to GaAs

Abstract: Investigation of reactively sputtered tungsten nitride as high temperature stable Schottky contacts to GaAs

Cited by 9 publications

References 5 publications

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS

Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system

Enhancement of hole injection using iridium-oxide-coated indium tin oxide anodes in organic light-emitting diodes

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Comparison of high temperature thermal stabilities of Ru and RuO2 Schottky contacts to GaAs

Abstract: Investigation of reactively sputtered tungsten nitride as high temperature stable Schottky contacts to GaAs

Cited by 9 publications

References 5 publications

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

Photoemission study of energy-band alignment for RuOx∕HfO2∕Si system

Enhancement of hole injection using iridium-oxide-coated indium tin oxide anodes in organic light-emitting diodes

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About

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS

Electrical properties of RuO₂ gate electrodes for dual metal gate Si-CMOS