“…The defect formation energies of defects with the charge state q dependent on the Fermi level position were defined as: 15
where E f ( X q ), E tot ( X q ) and E tot (pristine) are the defect formation energy of the system, total energy of the defective system, and total energy of the pristine system, respectively; n i , μ i , and q are the number of atoms removed or added from the supercells, chemical potential of the defective element, and number of charges carried by the defect, respectively; E f , E v and Δ V are the positions of the Fermi energy level, valence band maximum (VBM) and difference between the average electrostatic potential of the defect system and pristine KDP, respectively. The chemical potential of H was calculated halving the energy of H 2 , and the value was −3.62 eV.…”