Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On 2002
DOI: 10.1109/iit.2002.1258009
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Comparison of indium metrology using LEXES and SIMS [semiconductor doping]

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“…The preamorphization treatment was performed using a Si + bombardment ͑using 500keV 5 ϫ 10 15 Si + cm −2 for implants with indium Rp = 40 nm and 70 keV 2 ϫ 10 15 Si + cm −2 for implants with indium Rp =20 nm͒. In agreement with the results obtained by Kozminov et al 17 the double peak feature tends to disappear when using more severe annealing conditions. The doses of 2.22ϫ 10 15 ͑in the case of C at 13.5 keV͒, and 5.5ϫ 10 14 ͑for carbon implant at 5 keV͒ were chosen to produce twice the volume concentration of carbon with respect to indium within the peak of the distributions.…”
Section: Methodssupporting
confidence: 82%
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“…The preamorphization treatment was performed using a Si + bombardment ͑using 500keV 5 ϫ 10 15 Si + cm −2 for implants with indium Rp = 40 nm and 70 keV 2 ϫ 10 15 Si + cm −2 for implants with indium Rp =20 nm͒. In agreement with the results obtained by Kozminov et al 17 the double peak feature tends to disappear when using more severe annealing conditions. The doses of 2.22ϫ 10 15 ͑in the case of C at 13.5 keV͒, and 5.5ϫ 10 14 ͑for carbon implant at 5 keV͒ were chosen to produce twice the volume concentration of carbon with respect to indium within the peak of the distributions.…”
Section: Methodssupporting
confidence: 82%
“…The implants were performed in both crystalline and amorphous silicon. 10,16,17 We tend to agree with this conclusion as our results clearly show that this double peak feature is absent in the case of implants performed on a-Si. Carbon was co-implanted at energies of 13.5 and 5 keV, respectively, in order to overlap the indium distributions.…”
Section: Methodssupporting
confidence: 71%