Comparison of light emitting capacitors with textured and polished silicon substrates towards the understanding of the emission mechanisms

Alarcón-Salazar, J.; Vásquez-Agustín, Marco Antonio; Quiroga‐González, Enrique; Zaldívar-Huerta, I. E.; Aceves-Mijares, M.

doi:10.1016/j.jlumin.2018.06.060

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…shows the PL spectra of the SRO 30 film present in the S-LECs. Roughening does not appear to significantly affect the emission properties of the active material when it is optically stimulated, as previously demonstrated [28,29]. As can be observed, there are two peaks, one centered at 725 nm (red band) and a much weaker one at 428 nm (blue band, shown in the inset of Figure 3(a)).…”

Section: Figure 3(a)supporting

confidence: 80%

“…At medium electric fields (region II), the Fowler-Nordheim tunneling mechanism is responsible for the conduction. In this regimen, the observed current offset between curves of S-LECs is due to the augment of current density at lower electric fields; however, both curves present comparable slope [28]. At the higher electric fields (region III), the trap-assisted tunneling mechanism controls the carrier transport.…”

Section: Figure 3(a)mentioning

confidence: 67%

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Monolithically Integrable Si-Compatible Light Sources

Alarcón-Salazar¹,

Palacios-Huerta²,

González-Fernández³

et al. 2018

Recent Development in Optoelectronic Devices

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On the road to integrated optical circuits, the light emitting device is considered the bottleneck preventing us from arriving to the fully monolithic photonic system. While the development of silicon photonics keeps building momentum, the indirect bandgap nature of silicon represents a major problem for obtaining an integrated light source. Novel nanostructured materials based on silicon, such as silicon-rich oxide (SRO) containing silicon nanoparticles, present intense luminescence due to quantum phenomena. Using this material, electroluminescent devices have already been fabricated and even integrated in monolithic photonic circuits by fully complementary metal oxide semiconductor (CMOS) compatible techniques, opening the door to seamless electronic and photonic integration. The present work discusses some of the strategies used to improve the performance of SRO-based electroluminescent devices fully compatible with CMOS technology. Results from the characterization of devices obtained using different approaches are presented and compared.

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Section: Figure 3(a)supporting

confidence: 80%

Section: Figure 3(a)mentioning

confidence: 67%

Monolithically Integrable Si-Compatible Light Sources

Alarcón-Salazar¹,

Palacios-Huerta²,

González-Fernández³

et al. 2018

Recent Development in Optoelectronic Devices

View full text Add to dashboard Cite

show abstract

“…For example, developing integrated systems as lab-on-a-chip will require the simultaneous interaction between light and both chemical and biological elements, a difficult task for such low powers. Then, as an alternative to higher power light sources, which present lower compatibility for integration, we propose the development of more adequate electrophotonic sensors to counteract this limitation by the emitter, as the presently existing photodetectors are not developed within the intimate integration philosophy that electrophotonics offer [25].…”

Section: Introductionmentioning

confidence: 99%

Understanding the Light Detection in an Integrated Novel Electrophotonic Wavesensor Photodetector

2022

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This work presents a novel integrable silicon photodetector which can only be conceived as part of a monolithic electrophotonic basic structure formed of a silicon light emitter, waveguide and light detector. That is, it cannot operate as a single electronic or photonic device. The detector presents current gain, and photons reach the depletion region straightforward, allowing the detection of low power light produced by silicon light sources currently in use, which is difficult for existing photodetectors. The waveguide core is made of silicon nitride, and it is simultaneously the insulator in a MOS-like device. The light detection unit is intended for novel seamless electrophotonic platforms, and it is called wavesensor. In spite that the device is a MOS-like structure, it is not a MOSFET neither a lateral bipolar transistor, and one of the main differences with the former is that this is a bulk device working in Punch-Through regime. Being a MOS-like structure, it is fully compatible with standard microelectronics technology. A development of the mathematics involved in its operation is carried out in order to understand the physics of the detector, showing a gain factor in the photocurrent. Computer simulations of the fabrication process and photoelectric response of the device confirmed photocurrent values higher than the expected for a photodiode with efficiency = 1, thus demonstrating a new integrable photodetector with gain, capable of detecting light in the range of nW for electrophotonic applications.

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