Comparison of linewidth measurements on COG masks

Bosse, Harald; Mirandé, W.; Frase, C. G.; Brueck, Hans-Juergen; Lehnigk, Sigrid

doi:10.1117/12.425082

Cited by 7 publications

(6 citation statements)

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“…Using the sectional images, interfaces (edge positions) of a line are clearly observed by STEM and sectional SEM. From these reasons, we select to use STEM in the methods of investigation for the line width [7][8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

Edge determination methodology for cross-section STEM image of photoresist feature used for reference metrology

et al. 2013

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The novel method of sub-nanometer uncertainty for the line width measurement and line profile measurement using STEM (Scanning Transmission Electron Microscope) images is proposed to calibrate CD-SEM line width measurement and standardization of line profile measurement as reference metrology. In accordance with the proposed method, we already have established the methodology of Si line profile and line width measurement for reference metrology. In this article, we applied the proposed method to edge determination methodology of the photoresist feature. Using the proposed method, a specimen of photoresist feature is coated with metal, and then it is sliced as a thin specimen of 100 nm thickness by FIB (Focused Ion Beam) micro sampling system. Then the dark-field cross-sectional images of the specimen are obtained by STEM. The edge position of the photoresist is defined at the distance of half metal coating thickness from the peak positions of metal coating area. Then the detected line profiles are compared with the measurement results by CD-AFM. From series of analyses, we established the edge detection methodology of photoresist feature for reference metrology.

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Section: Introductionmentioning

confidence: 99%

Edge determination methodology for cross-section STEM image of photoresist feature used for reference metrology

et al. 2013

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“…Periodic [2], pitch [1,7,8] and individual [9] relief structures created on a solid surface are used as test objects for calibration of SEMs and AFMs. Parameters of some of the test objects are given in Table 1, and Table 2 outlines the parameters of SEMs and AFMs that can be determined with help of these test objects.…”

Section: Introductionmentioning

confidence: 99%

“…The linewidth for the individual structure is certified with help of ellipsometry [12]. BCR-97A/G-7 Germany trapezium with small angles of inclination of sidewalls interference pitch 400 [8] RRAS Russia right-angled profile ellipsometry linewidth 90 ÷ 500 *) [9] MShPS-2.0K Russia trapezium with large angles of inclination of sidewalls interference pitch linewidth relief height 2000 5 ÷ 1500 **) 100 ÷ 1500 **) [7] *) The range in which the certified sizes of structures RPS lie. **) The nominal values of the linewidth and the relief height are specified for the concrete sample of the test object.…”

Section: Introductionmentioning

confidence: 99%

Test objects with right-angled and trapezoidal profiles of the relief elements

et al. 2008

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Comparison is made for parameters and properties of test objects based on the relief structures with right-angled and trapezoidal profiles, which are used for calibration of scanning electron microscopes (SEMs) and atomic force microscopes (AFMs). Methods of calibration of SEMs and AFMs with help of this test objects are presented. Comparative analysis has shown that trapezoidal structures with large angles of sidewall inclination, created by anisotropic etching of silicon with the (100) orientation of its surface, possess the most universal characteristics. Such structures could be used for development of internationally recognized measures of length in the nanometer range for calibration of SEMs and AFMs.

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“…At present, linear measurements in the nanometer range are performed using scanning electron microscopes (SEMs) [1][2][3] and atomic force microscopes (AFMs) [4][5][6]. SEM and AFM calibration is done with the help of special test objects.…”

Section: Introductionmentioning

confidence: 99%

“…SEM and AFM calibration is done with the help of special test objects. They are periodic relief structures [2] and pitch relief structures [4][5][6] on a solid surface. The parameters of some of the test objects are presented in table 1, and SEM and AFM parameters that can be determined using such test objects are presented in table 2.…”

Section: Introductionmentioning

confidence: 99%

Test object of the linewidth with a trapezoidal profile and three certified sizes for an SEM and AFM

Gavrilenko¹,

Mityukhlyaev²,

Novikov³

et al. 2009

Meas. Sci. Technol.

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We created a test object of the linewidth with three different certified sizes. Relief structures of the test object are individual steps and protrusions, as well as pitch structures with trapezoidal profile, created by anisotropic etching of monosilicon. The orientation of the silicon surface coincides with the (1 0 0) crystallographic plane. The structures are located in two orthogonal directions. We present the results of the study of the individual relief elements (protrusions and steps) with the help of a scanning electron microscope (SEM) and an atomic-force microscope (AFM). The widths of the upper bases of the protrusions are in the 14-400 nm range. We performed a correlation analysis of the experimental results, which demonstrates the high quality of the created structures.

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Comparison of linewidth measurements on COG masks

Cited by 7 publications

References 0 publications

Edge determination methodology for cross-section STEM image of photoresist feature used for reference metrology

Edge determination methodology for cross-section STEM image of photoresist feature used for reference metrology

Test objects with right-angled and trapezoidal profiles of the relief elements

Test object of the linewidth with a trapezoidal profile and three certified sizes for an SEM and AFM

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