Comparison of low-frequency noise in III–V and Si∕SiGe HBTs

5. Reliability

“…Evidently, the existence of significant RTS noise in smaller geometries is well accepted [Pas04]. In our case, the RTS corresponds to the existence of GR1 in the noise spectral density at low frequency, which we have identified as a contribution due to emitter periphery.…”

“…In [Pas04], the observations are quite similar for SiGe HBTs, where a G-R is observed only at low bias and in a frequency range below 100 Hz for smaller devices; it was illustrated from time analysis that this G-R component is related to RTS noise. In our results, the bias dependence shows a weak evolution of the RTS amplitudes.…”

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

“…Nevertheless, eq. ( 262) suggests that the rise of the bias level to J C corresponding to maximum transit frequency f T is in tradeoff with low-frequency noise performance, since the corner frequency f c between flicker noise and white noise increases faster and f c becomes closer to f T , which is observed experimentally for BJT, as shown in the bottom half of Figure 39 and reported previously in [29], with data from [211,212,213].…”

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors

“…Whatever the transistors and whatever the base bias currents, the measured current spectral density is composed of a pure 1/f and white noise components, as can be seen in Fig 3. This contrasts with the recent published data concerning advanced Poly-Emitter BJTs and especially for SiGe HBTs for which the presence of Lorenzian components are often observed and associated with generationrecombination or RTS noise [3]. The second interesting feature is the evolution of the 1/f noise level of the base current noise spectral density, S IB , with the base bias current I B (see Fig.…”

“…The base bias dependence of the 1/f noise is classically used in order to localize the 1/f noise sources [5]. Comparing with other advanced Si based bipolar technologies the I B 1.2 law is "unusual" as the base current exponent is currently found to be close to 2 [3,6]. Exponent 2 is associated with carriers fluctuations through barrier formed by the interfacial oxide or by the polysilicon/monosilicon interface emitter (also referred to the tunnelling noise component).…”