Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering

Mitchel, W. C.; Brown, Jeff L.; Buckanan, D.; Bertke, R.; Malalingham, K.; Orazio, Fred D.; Pirouz, P.; Tseng, Huang-Ju R.; Ramabadran, Uma; Roughani, B.

doi:10.4028/www.scientific.net/msf.338-342.841

Cited by 16 publications

(14 citation statements)

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“…[12,13] In addition, electrically active near surface defects have also been observed. [14] The situation is such that surface and subsurface quality is often regarded as a limiting factor in the production of high quality SiC based devices.…”

Section: B) Silicon Carbide Sensor Research At West Virginia Universitymentioning

confidence: 91%

Advanced Solid State Sensors for Vision 21 Systems

Meehan¹,

Stinespring²

2003

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Device fabrication and characterization studies relevant to the development of silicon carbide (SiC) based gas and temperature sensors have been performed. Initial studies of Pd deposition on Si were performed since the procedures for Si substrate preparation were well known to us. This allowed us to gain experience in controlling the deposition process while continuing to investigate methods of preparing the SiC substrate surface. Studies of SiC surface preparation were carried out under a separate contract. As our SiC substrate preparation techniques improved, studies of Pd deposition on SiC were performed and the thermal stability of Pd/SiC interfaces (i.e., the critical sensor component) was characterized. These studies have demonstrated that the Pd/SiC interface is remarkably stable at temperatures up to 670 o C. At this time, we are moving rapidly to a point where the oxide overlayer can be reproducibly reduced to an acceptable level and large areas of the substrate can be reproducibly produced with the surface roughness reduced to the atomic scale. We believe that this will substantially improve the thermal stability of the Pd/SiC interface. In all these studies, techniques are being used that could readily be incorporated into commercial processes. Moreover, as a result of our ultrahigh vacuum approach to device fabrication, we are in a position to monitor and document each step of the process and to relate this data to device characteristics and performance. Experiments are now underway to study the effects of improved substrate surfaces on these interfaces. Device modeling and electrical characterization studies were performed to complement the device fabrication studies.These included temperature dependent I-V and series resistance measurements for SiC p-n junctions. Presently, Pd/SiC structures produced in the above deposition experiments are undergoing electrical characterization.iii CONTENTS

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Section: B) Silicon Carbide Sensor Research At West Virginia Universitymentioning

confidence: 91%

Advanced Solid State Sensors for Vision 21 Systems

Meehan¹,

Stinespring²

2003

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“…Their atomic force microscopy studies demonstrated that scratch-free surfaces could be produced with CMP. Mitchel et al 12 used a similar process and achieved scratch and damage free surfaces on vicinal 4H-SiC wafers. However, there have been no studies of epitaxial growth of SiC on CMP prepared wafers reported to date that the authors are aware of.…”

Section: Introductionmentioning

confidence: 97%

“…10 Chemical mechanical polishing (CMP) has been used for some time to prepare damage free surfaces for silicon and gallium arsenide and is under development for SiC. 11,12 CMP is believed to be under development by several wafer suppliers but their processes are proprietary. Zhou et al 11 have demonstrated a collodial silica based CMP for SiC and achieved removal of the subsurface damage layer present in as-received wafers.…”

Section: Introductionmentioning

confidence: 99%

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Saddow

Schattner

Brown

et al. 2001

Journal of Elec Materi

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“…[6][7][8][9][10][11][12][13][14][15][16][17] There are also reports on the quality of epi-films investigated from the view-point of surface preparation before starting the epi-film growth. 18,19) However, most of those works are based on the assumption that damage is introduced uniformly on the wafer surface, but not locally.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers

Sasaki¹,

Matsuhata

Tamura³

et al. 2015

Jpn. J. Appl. Phys.

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Surface defects with a scratch-like appearance are often observed locally on 4H-SiC wafers after epitaxial film (epi-film) growth. Since optical microscopy has only revealed a very flat surface after chemo-mechanical polishing (CMP) and before epi-film growth, the origins of these scratchlike surface defects have remained unknown. Therefore, we investigated the generation mechanism of such surface defects by synchrotron Berg-Barrett X-ray topography. Although only highly flat surfaces are observed by optical microscopy, we found that damaged regions comprising lattice defects are often introduced locally during polishing in the subsurface region. These lattice defects are almost completely removed by hydrogen etching, a pre-process for epi-film growth; however, surface defects associated with step bunching are formed in such damaged areas of the wafer surface. It is clear that local surface defects develop into surface defects with a scratch-like appearance during epi-film growth.

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Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering

Cited by 16 publications

References 0 publications

Advanced Solid State Sensors for Vision 21 Systems

Advanced Solid State Sensors for Vision 21 Systems

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers

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