2014
DOI: 10.1039/c4ra09446h
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Comparison of metal chloride-doped graphene electrode fabrication processes for GaN-based light emitting diodes

Abstract: The metal chloride doped graphene (D-G) enhanced the electrical properties of the light emitting diodes (LEDs). Therefore, avoiding the inductively coupled plasma etching step is better for D-G electrodes in GaN-based LEDs.

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Cited by 5 publications
(1 citation statement)
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“…[27][28][29][30][31][32] As a standard method of micro-fabrication, lithography involves several process steps to achieve the final device structure, namely photoresist deposition, UV light exposure, O 2 plasma etching, and so on. These processes, although material-friendly in most cases, are not congenial in graphene-based device fabrication, [33][34][35] especially when unintentional doping of graphene is a real concern. Under the aforementioned circumstances, there are a few major challenges in the development of graphene-based flexible electronics; 1) high-yield transfer of CVD-grown graphene on desired flexible substrates, 2) retaining the intrinsic property of graphene even after the transfer process, and 3) pattern formation without damaging the graphene.…”
Section: Doi: 101002/adem202301810mentioning
confidence: 99%
“…[27][28][29][30][31][32] As a standard method of micro-fabrication, lithography involves several process steps to achieve the final device structure, namely photoresist deposition, UV light exposure, O 2 plasma etching, and so on. These processes, although material-friendly in most cases, are not congenial in graphene-based device fabrication, [33][34][35] especially when unintentional doping of graphene is a real concern. Under the aforementioned circumstances, there are a few major challenges in the development of graphene-based flexible electronics; 1) high-yield transfer of CVD-grown graphene on desired flexible substrates, 2) retaining the intrinsic property of graphene even after the transfer process, and 3) pattern formation without damaging the graphene.…”
Section: Doi: 101002/adem202301810mentioning
confidence: 99%