Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation

Suproniuk, Marek; Pawłowski, M.; Wierzbowski, M.; Majda-Zdancewicz, Ewelina; Pawłowski, M.

doi:10.1063/1.5004098

Cited by 8 publications

(5 citation statements)

References 23 publications

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“…where L{du/dx} and L{di/dx} are the Laplace transforms of the partial derivative over time for voltage and current, respectively; I(x, s) and U(x, s) are the Laplace transforms on the long line of current and voltage, respectively; and s is the Laplace transform operator. The voltage and current equation transforms take the form [23][24][25] U…”

Section: Modelling the Heating Up Of Electrical Cablesmentioning

confidence: 99%

A Method for Determining the Impact of Ambient Temperature on an Electrical Cable during a Fire

Perka

Piwowarski

2021

Energies

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Evaluating environmental conditions that trigger fire-fighting equipment is one of the primary design tasks that have to be taken into account when engineering electrical systems supplying such devices. All of the solutions are aimed at, among others, preserving environmental parameters in a building being on fire for an assumed time and at a level enabling safe evacuation. These parameters include temperature, thermal radiation, visibility range, oxygen concentration, and environmental toxicity. This article presents a new mathematical model for heat exchange between the environment and an electric cable under thermal conditions exceeding permissible values for commonly used non-flammable installation cables. The method of analogy between thermal and electrical systems was adopted for modelling heat flow. Determining how the thermal conductivity of the cable and the thermal capacity of a conductor-insulation system can be applied to calculate the wire temperature depending on the heating time t and distance x from the heat source is discussed. Thermal conductivity and capacity were determined based on experimental tests for halogen-free flame-retardant (HFFR) cables with wire cross-sections of 2.5, 4.0, and 6.0 mm2. The conducted experimental tests enable verifying the results calculated by the mathematical model.

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Section: Modelling the Heating Up Of Electrical Cablesmentioning

confidence: 99%

A Method for Determining the Impact of Ambient Temperature on an Electrical Cable during a Fire

Perka

Piwowarski

2021

Energies

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“…The coefficient b is related to the parameters of the defect center. The methods of obtaining and analyzing defect centers parameters based on Arrhenius plot, were the subject of earlier studies presented in detail in [12,13].…”

Section: Determination Of Time Constantsmentioning

confidence: 99%

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Piwowarski¹,

Suproniuk²,

Kamiński³

et al. 2020

Radioelectronic Systems Conference 2019

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The article presents the experimental results of research works aimed at manufacturing photoconductive semiconductor switches (PCSSs) on semi-insulating (SI) gallium phosphide (GaP) wafers. The PCSS is an electrical switch, triggered into the conduction state by means of an optical pulse with specific photon energy. The switches presented in the paper are developed for the applications in power systems and high-pulse voltage generators. The paper presents time courses of the photocurrent being a response to the excitation of semiconductor material with an optical pulse that generates excess charge carriers. The effects of laser beam photon energy on the height and time constant of photocurrent pulses were determined. The results of measurements of photocurrent in the conduction state for various values of electric field strength are presented. The research methodology was discussed and the measuring system used was described. Possible directions of further research were also presented. The research was carried out thanks to the cooperation of scientific teams from the

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“…One of the methods of studying the defect structure of semiconductor materials is high-resolution photoinduced transient spectroscopy (HRPITS). Unfortunately, due to the solution of ill-posed equations, the results of the parameters of defect centers obtained on the basis of this method are imprecise [9,10].…”

Section: Introductionmentioning

confidence: 99%

Metrology and Measurement Systems

Suproniuk

2021

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Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).

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Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation

Cited by 8 publications

References 23 publications

A Method for Determining the Impact of Ambient Temperature on an Electrical Cable during a Fire

A Method for Determining the Impact of Ambient Temperature on an Electrical Cable during a Fire

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Metrology and Measurement Systems

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