Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz

Judaschke, R.

doi:10.1109/22.841964

Cited by 13 publications

(19 citation statements)

References 6 publications

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“…Many reports on such results are available in the literature [2]. More recent work using these models demonstrated agreement with experimental results from InP Gunn devices at higher millimeter-wave frequencies of, for example, 128 GHz in the fundamental mode [27] and 188 GHz in a second-harmonic mode [28].…”

Section: Predicted Gunn-device Performancesupporting

confidence: 54%

“…Subsequently, this program was expanded to account for heat flow in the device and to include the harmonic-balance technique for devices not only operating in the fundamental mode, but also in a higher harmonic mode [8], [17]. Similar to the findings from hydrodynamic or energy-momentum models [27], excellent agreement was found with the same aforementioned experimental results at 130 and 188 GHz [17]. Compared to hydrodynamic or energy-momentum models, however, the Monte Carlo approach takes the transport dynamics of individual quasiparticles, which are subject to internal and external forces and to various scattering mechanisms, more accurately into account.…”

Section: Predicted Gunn-device Performancementioning

confidence: 99%

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Submillimeter-Wave InP Gunn Devices

Eisele

Kamoua

2004

IEEE Trans. Microwave Theory Techn.

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Abstract-Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators first at -band (110-170 GHz) and then at -band (75-110 GHz) frequencies. More importantly, they next resulted in orders of magnitude higher RF output power levels above -band and operation in a second-harmonic mode up to at least 325 GHz. Examples of the state-of-the-art performance are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3.5 mW at 300 GHz, and more than 2 mW at 315 GHz. The dc power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Two different types of doping profiles, a graded profile and one with a doping notch at the cathode, are prime candidates for operation at submillimeter-wave frequencies. Generation of significant RF power levels from InP Gunn devices with these optimized doping profiles is predicted up to at least 500 GHz and the performance predictions for the two different types of doping profiles are compared.

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Section: Predicted Gunn-device Performancesupporting

confidence: 54%

Section: Predicted Gunn-device Performancementioning

confidence: 99%

Submillimeter-Wave InP Gunn Devices

Eisele

Kamoua

2004

IEEE Trans. Microwave Theory Techn.

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“…[4] resulted in a wider width [3]. On the other hand, a doping mesa rather than a notch was suggested to enhance the harmonic content of the current waveform [5,6]. To elucidate this point, Fig.…”

Section: Structural Details and Resultsmentioning

confidence: 97%

Harmonic enhancement of Gunn oscillations in GaN

Sevik

Yilmaz²,

Bulutay

2005

AIP Conference Proceedings

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High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted. © 2005 American Institute of Physics

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“…The 2.0-µm-grooved-anode diode operates at a frequency f of In order to calculate the electrical characteristics of the diode, we put a single-tone sinusoidal voltage of form V DC + V AC sin(2πft) across the diode instead of embedding it to a resonant circuit, as the external circuit adds complexity to the calculation and easily results in non-convergence. This method is very popular in the analysis of the RF performance of Gunn diodes [30][31][32][33][34][35][36][37] and its validity has been proved in previous publications [33][34][35][36][37]. The applied DC voltage V DC has to be above a critical value so that the device is biased in the negative differential mobility regime.…”

Section: Resultsmentioning

confidence: 99%

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

Wang

2020

Micromachines

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In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on the numerical results, the best output characteristics are obtained at the 2.0-µm symmetrical grooved-anode diode, which produces nearly 5.48 mW of power at the fundamental frequency of 172.81 GHz, with 3.13% efficiency of power conversion. If the grooved anode contact is not positioned in the middle of the diode, the harmonic frequency would be enhanced. The GaN heterostructure grooved-anode Gunn diode has been demonstrated to be an excellent solid-state source of terahertz oscillator.

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Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz

Cited by 13 publications

References 6 publications

Submillimeter-Wave InP Gunn Devices

Submillimeter-Wave InP Gunn Devices

Harmonic enhancement of Gunn oscillations in GaN

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

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