Comparison of non-polar ZnO films deposited on single crystal ZnO and sapphire substrates

Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy

“…There are several reports on growing non-polar A-plane ZnO on R-plane sapphire substrates. Most of the studies report the A-plane ZnO films grown by MOCVD [6][7][8][9] and only a few studies report molecular-beam epitaxy (MBE) of A-plane ZnO [10,11]. We note that there have been no detail studies on growth and properties of A-plane ZnO grown by MBE on R-plane sapphire so far.…”

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

“…For GaN heterostructures and devices several reports on the enhanced optical efficiency of non-polar grown structures exist [1,2]. In the case of ZnO, there are some reports about the growth of non-polar ZnO thin films using a variety of methods, for example MBE [5], PLD [6] or MOCVD [7][8][9]. Heteroepitaxial [5][6][7] as well as homoepitaxial [7][8][9] growth approaches were adopted so far.…”

Growth and characterization of Mg Zn1−O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

“…In case of optoelectronic devices, as well known, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency [6,7]. Recently, nonpolar ZnO films without a polarity along the growth direction have been studied to avoid such a polarization effect [8][9][10][11][12].…”