Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Pan, Tung Ming; Lei, Tan Fu; Ko, Fu Hsiang; Chao, Tien Sheng; Chiu, Te-Hsin; Lee, Ying Hao; Lu, Chih Peng

doi:10.1109/66.964323

Cited by 14 publications

(6 citation statements)

References 9 publications

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“…Pan [1] studied some post-poly-Si CMP cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylene diamine tetra acetic acid, citric acid and oxalic acid which are all solid agents. Patri [3] emphasized molecular structure of some chelating agents such as different functional groups, the length of the carbon chain and the relative positions of different functional groups.…”

Section: Requirements For Chelating Agents In Silicon Wafer Processmentioning

confidence: 99%

“…The slurry used in polishing procedure is a crucial factor influencing metal pollution level because the metal ions in polishing slurry tend to adhere on Si surface. Especially the fast diffusing metallic impurities such as copper, iron and chromium, even the least bit of contamination, will induce many crystal defects and may extend the current of device, evoke p-n junction strike out and so on [1].…”

Section: Introductionmentioning

confidence: 99%

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Study of Chelating Agents in Silicon Wafer Polishing Slurry

Zhang

Wang

2012

AMR

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Several chelating agents in silicon polishing slurries were studied about their effects on copper adhesion to the surface of silicon wafer. The copper contamination level on the Si wafer surface was measured with GFAAS. The results indicate that PAA and HEDP for acid slurries can reduce 80% copper contamination with respect to the situation of without chelating agent. EDTA, the most common chelating agent for alkaline slurries, has no predominant compared with FA/O and AEEA. The copper contamination on Si wafer surface can reduce nearly 50% by adding EDTA while the addition of FA/O or AEEA in the same concentration for alkaline slurries can reach more than 70% reduction of copper contamination level.

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Section: Requirements For Chelating Agents In Silicon Wafer Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of Chelating Agents in Silicon Wafer Polishing Slurry

Zhang

Wang

2012

AMR

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“…These ligands coordinate with metal ions through their electron-donating atoms, resulting in the formation of highly stable cyclic chelates that resist dissociation [ 4 ]. In the realm of integrated circuits and microelectronics, chelating agents play a critical role and find widespread applications in various processes, including substrate polishing, cleaning, and even thin film layer etching [ 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

DFT Exploration of Metal Ion–Ligand Binding: Toward Rational Design of Chelating Agent in Semiconductor Manufacturing

Wang,

Zhu,

Huang

et al. 2024

Molecules

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Chelating agents are commonly employed in microelectronic processes to prevent metal ion contamination. The ligand fragments of a chelating agent largely determine its binding strength to metal ions. Identification of ligands with suitable characteristics will facilitate the design of chelating agents to enhance the capture and removal of metal ions from the substrate in microelectronic processes. This study employed quantum chemical calculations to simulate the binding process between eleven ligands and the hydrated forms of Ni2+, Cu2+, Al3+, and Fe3+ ions. The binding strength between the metal ions and ligands was quantified using binding energy and binding enthalpy. Additionally, we explored the binding interaction mechanisms and explained the differences in binding abilities of the eleven ligands using frontier molecular orbitals, nucleophilic indexes, electrostatic potentials, and energy decomposition calculations based on molecular force fields. Based on our computational results, promising chelating agent structures are proposed, aiming to guide the design of new chelating agents to address metal ion contamination issues in integrated circuit processes.

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“…Experiments conducted by Xie et al showed that the slurry containing 20 mmol of ammonium citrate caused a 71.6% increase in the MRR compared to the control group. Compared to the above additives, new additives with amine groups have also become popular additives for silicon wafer CMP, due to the following advantages: (1) they can achieve a higher MRR (>500 nm/min) [19,20], (2) they do not introduce contamination with metal ions such as Na + , K + , etc., and (3) they can be used as chelating agents to remove metal ions [21,22]. Polyamines are a representative class of amine additives that can achieve large MRR improvements.…”

Section: Introductionmentioning

confidence: 99%

“…Traditional MD simulations based on classical force fields can simulate the dynamic evolution of large systems with thousands or even tens of thousands of atoms, but they have the disadvantage of not being able to describe the chemical reactions. Compared to the above additives, new additives with amine groups have also become popular additives for silicon wafer CMP, due to the following advantages: (1) they can achieve a higher MRR (>500 nm/min) [19,20], (2) they do not introduce contamination with metal ions such as Na + , K + , etc., and (3) they can be used as chelating agents to remove metal ions [21,22]. Polyamines are a representative class of amine additives that can achieve large MRR improvements.…”

Section: Introductionmentioning

confidence: 99%

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

Lin,

Zhu,

Huang

et al. 2024

Nanomaterials

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Polyamines have become important chemical components used in several integrated circuit manufacturing processes, such as etching, chemical mechanical polishing (CMP), and cleaning. Recently, researchers pointed out that polyamines can be excellent enhancers in promoting the material removal rate (MRR) of Si CMP, but the interaction mechanism between the polyamines and the silicon surface has not been clarified. Here, the micro-interaction mechanisms of polyamines, including ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), and pentaethylenehexamine (PEHA), with the Si(1, 0, 0) surface were investigated through molecular dynamics (MD) simulations using the ReaxFF reactive force field. Polyamines can adsorb onto the Si(1, 0, 0) surface, and the adsorption rate first accelerates and then tends to stabilize with the increase in the quantity of -CH2CH2NH-. The close connection between the adsorption properties of polyamines and the polishing rate has been confirmed by CMP experiments on silicon wafers. A comprehensive bond analysis indicates that the adsorption of polyamines can stretch surface Si–Si bonds, which facilitates subsequent material removal by abrasive mechanical wear. This work reveals the adsorption mechanism of polyamines onto the silicon substrate and the understanding of the MRR enhancement in silicon CMP, which provides guidance for the design of CMP slurry.

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Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Cited by 14 publications

References 9 publications

Study of Chelating Agents in Silicon Wafer Polishing Slurry

Study of Chelating Agents in Silicon Wafer Polishing Slurry

DFT Exploration of Metal Ion–Ligand Binding: Toward Rational Design of Chelating Agent in Semiconductor Manufacturing

Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments

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