Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states

Lin, Li‐Yen; Chen, Chih‐Ying; Huang, Heming; Arsenijević, D.; Bimberg, D.; Grillot, Frédéric; Lin, Fan-Yi

doi:10.1364/ol.43.000210

Cited by 22 publications

(8 citation statements)

References 34 publications

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“…In what follows, the r ext,p extracted from short-to long-cavity region of the undoped QD laser is shown in Figure 5. Extending the L ext from 5 cm to 50 cm, which corresponds to a ratio f RO /f ext ranging from 0.83 to 8.3, the boundaries of the periodic oscillation of the undoped laser show some residual undulations in the short-cavity region, which results from the interferences between the internal and external cavity modes; 28,29 whereas in the long-cavity region, the r ext,p keeps decreasing until it progressively becomes rather independent of L ext . Let us stress that whatever the L ext is, both the p-doped and undoped devices exhibit high tolerance for external reflection without showing any chaotic pulsations up to ∼ 20%.…”

Section: Resultsmentioning

confidence: 99%

P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon

Dong

Chen

Tsay

et al. 2020

Semiconductor Lasers and Laser Dynamics IX

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This work reports on the optical feedback dynamics of InAs/GaAs QD lasers epitaxially grown on silicon operating in both the short and long delay regimes. Both undoped and p-doped QD lasers are considered. Whatever the external cavity length, no chaotic oscillations are observed on both samples as a result of the small α-factor observed in the silicon QD lasers. Despite that, experiments conducted in the short-cavity region raise period-one oscillation for the undoped QD laser. In addition, the transition from the short to long delay regimes can be finely covered by varying the external cavity length from 5 cm to 50 cm, and the boundaries associated to the appearance of the periodic oscillation are identified. In the short-cavity region, boundaries show some residual undulations resulting from interferences between internal and external cavity modes; whereas in the long-delay regime, the feedback ratio delimiting the boundaries keeps decreasing, until it progressively becomes rather independent of the external cavity length. Overall, our results showed that the p-doped device clearly exhibits a much higher tolerance to the different external feedback conditions than the undoped one, seeing that its periodic oscillation boundaries are barely impossible to retrieve at the maximum feedback strength of -7 dB. These results show for the first time the p-modulation doping effect on the enhancement of feedback insensitivity in both short-and long-delay configurations, which is of paramount importance for the development of ultra-stable silicon transmitters for photonic technologies.

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Section: Resultsmentioning

confidence: 99%

P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon

Dong

Chen

Tsay

et al. 2020

Semiconductor Lasers and Laser Dynamics IX

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“…Further increase of the external cavity length to the long cavity regime leads to frequency-locking regimes as reported elsewhere. 13 Experimental results reveal that the GS laser is perfectly stable such that no chaotic state was found whatever the feedback strength level used in this setup. Besides, the GS laser remains under the steady-state condition providing the feedback strength does not exceed 30% which is already much larger compared to any typical reflection levels taking place in a transmission system 13 .…”

Section: Laser Structure and Experimental Setupmentioning

confidence: 87%

Recent advances in InAs/GaAs quantum dot lasers with short optical feedback

Grillot

Huang

Lin

et al. 2018

Semiconductor Lasers and Laser Dynamics VIII

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The optical feedback dynamics of two multimode InAs/GaAs quantum dot lasers emitting exclusively on sole ground or excited lasing states is investigated under the short delay configuration. Although the two lasers are made from the same active medium, their responses to the external perturbation are found not much alike. By varying the feedback parameters, various periodic and chaotic oscillatory states are unveiled. The ground state laser is found to be much more resistant to optical feedback, benefiting from its strong relaxation oscillation damping. In contrast, the excited state laser can easily be driven into very complex dynamics. While the ground state laser is of importance for the development of isolator-free transmitters, the excited one is essential for applications taking advantages of chaos such as chaos lidar, chaos radar, and random number generation.

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“…For the QW FP laser, even under a weak EOF of −37 dB, multiple frequency noise peaks already exist in the RIN diagram in Figure 5B. The periodic peaks could be the high-order harmonics of the fundamental RO frequency, which are caused by the intracavity resonance, and thus the coherence collapse follows in the RF spectrum and RIN diagram (Lin et al, 2018). With increasing EOF levels, the noise level continuously grows, which leads to significant optical spectral broadening in Figures 3B,E.…”

Section: Relative Intensity Noise Measurementsmentioning

confidence: 98%

Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

et al. 2021

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A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

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Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states

Cited by 22 publications

References 34 publications

P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon

P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon

Recent advances in InAs/GaAs quantum dot lasers with short optical feedback

Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

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