Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne

Lee, J.W; Lim, Yeong-Dae; Baek, I. K.; Yoo, S.Y; Cho, G.S; Jeoin, M.H; Leem, Jae Young; Pearton, S. J.

doi:10.1016/j.apsusc.2004.04.008

Cited by 8 publications

(2 citation statements)

References 31 publications

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“…The chemistry of the etching for the employed gas mixture of Cl 2 , BCl 3 , and CH 4 on Al-rich AlGaAs has not been discussed so far. [12][13][14][15] On the basis of the above findings, we depict the suggested etching chemistry in Fig. 7.…”

Section: Effect Of Gas Mixturementioning

confidence: 93%

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Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication

Mochizuki

Kitabayashi

Nakajima

et al. 2011

Jpn. J. Appl. Phys.

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We investigate inductively coupled plasma deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using Cl2, BCl3, and CH4 chemistry. The characteristic AlO x deposition is observed during the etching, resulting in the reduction of etching rate. BCl3 is considered to scavenge the deposited AlO x by its reductive reaction. CH4 passivates the etching sidewall, as well as enhances the deposition of AlO x . Concerning the impact of pattern size, a pronounced inverse reactive ion etching (RIE) lag is observed, which is beneficial for small-size PC fabrication typically with a hole diameter of 100–500 nm. From the findings, we successfully fabricated a PC structure with air holes having an aspect ratio of 8 and a diameter of 110 nm.

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Section: Effect Of Gas Mixturementioning

confidence: 93%

“…[12][13][14][15] On the basis of the above findings, we depict the suggested etching chemistry in Fig. 7.…”

Section: Effect Of Gas Mixturementioning

confidence: 97%