Comparison of plasma etch techniques for III–V nitrides

Shul, R. J.; Vawter, G.A.; Willison, C. G.; Bridges, M. M.; Lee, J.W; Pearton, S. J.; Abernathy, C. R.

doi:10.1016/s0038-1101(98)00223-8

Cited by 46 publications

(18 citation statements)

References 15 publications

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“…Gallium nitride (GaN) is an important wide and direct bandgap semiconductor which finds its applications in various optoelectronics [18][19][20]. Due to the quantum confinement effects, nanostructured devices have attracted extensive research interests for their enhanced electronic and optical properties.…”

Section: Numerical Resultsmentioning

confidence: 99%

QUANTUM MECHANICAL MODELING OF ELECTRON-PHOTON INTERACTIONS IN NANOSCALE DEVICES (Invited Paper)

Wang¹,

Chen²,

Yam³

2015

PIER

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Abstract-An efficient quantum mechanical approach is formulated to model electron-photon interactions in nanoscale devices. Based on nonequilibrium Green's function formalism, electron-photon interactions and open boundaries in the nanoscale systems are taken into account in terms of selfenergies. By separating different components in the electron-photon interactions, optical absorption and emission processes in the devices can be analyzed, and the method allows studies of different optoelectronic devices. In conjunction with density-functional tight-binding method, photo-induced current and other optical properties of nanoscale devices can be simulated without relying on empirical parameters. To demonstrate our approach, numerical studies of gallium nitride nanowire solar cells of realistic sizes are presented.

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Section: Numerical Resultsmentioning

confidence: 99%

QUANTUM MECHANICAL MODELING OF ELECTRON-PHOTON INTERACTIONS IN NANOSCALE DEVICES (Invited Paper)

Wang¹,

Chen²,

Yam³

2015

PIER

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“…We have recently reported the effect of plasma-induced-damage on n-and p-type GaN by monitoring changes in the sheet resistance (R,) and specific contact resistance (rC)of thin conducting layers under a variety of ICP plasma conditions simulating those used during device etching [14]. Sheet resistance and specific contact resistance determined from the circular transmission line model (TLM) are used to evaluate plasmainduced-damage.…”

Section: Plasma Etching Studies Of Iii-n Materialsmentioning

confidence: 99%

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices

Crawford¹,

Chow²,

Wright³

et al. 1999

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“…If the wafer is tilted, which is often necessary, since for the most of materials sputter yield is maximum for incident angels between 45 0 -60 0 , the area to be etched receives proportionally less exposure. Shallow etching of fine pattern of diffractioin grating in GaN without serious mask-edge erosion [13] and over-and undercutting kept to a minimum, is possible only with thin photoresist layer and short etching times. Both examples mentioned above i.e.…”

Section: Introductionmentioning

confidence: 99%

About holographic lithography for grating coupler fabrication in gallium nitride grown by MOVPE on sapphire substrate

et al. 2005

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The use of the holographic lithography method for sub-nano pattering of photoresist layer deposited on bare sapphire substrate as well as on GaN grown by metaloorganic vapour phase epitaxy on Al 2 O 3 is reported. Positive photoresist Shipley SPR700 was first diluted with photoresist thinner and then spin-coated on prepared substrates to obtain layers of final thickness of 227nm. Thin photoresist layer was exposed in the holographic setup with wavelength of 355nm to produce the surface relief grating. After development SEM observations reveled well-defined valleys and ridges of diffraction grating in SPR700 deposited on gallium nitride layer whereas the whole structure on sapphire was strongly affected by the speckles created by reflection from the unpolished back surface of the sapphire substrate. Latter, we confirmed with transmission spectroscopy, that even small amount of light transmitted through the substrate, which is back reflected by the unpolished back-surface of sapphire, can strongly disturb nano-sized features in photoresist.

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Comparison of plasma etch techniques for III–V nitrides

Cited by 46 publications

References 15 publications

QUANTUM MECHANICAL MODELING OF ELECTRON-PHOTON INTERACTIONS IN NANOSCALE DEVICES (Invited Paper)

QUANTUM MECHANICAL MODELING OF ELECTRON-PHOTON INTERACTIONS IN NANOSCALE DEVICES (Invited Paper)

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices

About holographic lithography for grating coupler fabrication in gallium nitride grown by MOVPE on sapphire substrate

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