Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates

Abstract

The comparative analysis of optical characteristics inherent to TiO 2 /SiC and TiO 2 /por-SiC/SiC structures has been performed. It has been shown that, in these structures regardless of the substrate structure, formation of TiO 2 layers with approximately the same width 60 nm takes place. In this case the TiO 2 film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO 2 /por-SiC/SiC structure leads to blurring the oxide film-substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film.