Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

Lozano, M.; Pellegrini, G.; Fleta, C.; Loderer, C.; Rafı́, J.M.; Ullán, M.; Campabadal, F.; Martínez, C. Moreno; Key, M.; Casse, G.; Allport, P. P.

doi:10.1109/tns.2005.855809

Cited by 34 publications

(33 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reference measurements taken for the comparison with simulation findings are extracted from [16]. The resulting depletion voltages in Fig.11 show indeed a good agreement, within the experimental errors, between simulations and measurements at room temperature.…”

Section: B Comprehensive Surface and Bulk Damage Modelsupporting

confidence: 55%

See 1 more Smart Citation

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

Moscatelli

Passeri

Morozzi

et al. 2016

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Abstract-In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2×10 16 1 MeV equivalent n/cm 2 ) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.

show abstract

Section: B Comprehensive Surface and Bulk Damage Modelsupporting

confidence: 55%

“…Fig. 11 Comparison between simulated and experimental [16] depletion voltages for n-in-p pad detectors at room temperature. 3.23×10 -14 0.9…”

Section: B Comprehensive Surface and Bulk Damage Modelmentioning

confidence: 99%

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

Moscatelli

Passeri

Morozzi

et al. 2016

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…The n + -on-p type sensors exhibit a decrease in EDV with initial fluence, as shown in figure 7(b). This is understood to be caused by oxygen induced removal of boron interstitial acceptor sites, an effect that has been previously observed [11,12].…”

Section: Bulk Radiation Damagementioning

confidence: 61%

“…Eventually, the bias voltage required to obtain sufficient charge from a sensor will cause electrical breakdown in the silicon or exceed the 500 V hardware limit, thus limiting the useful lifetime of the silicon detector. For an oxygenated n + -on-p type sensor irradi- ated with charged hadrons there are expected to be competing mechanisms, with acceptor introduction partially compensated by initial oxygen-induced acceptor removal [11,12]. Following manufacture the depletion voltage of each VELO sensor was measured by comparing the capacitance (C) to the bias voltage (V) [13].…”

Section: Depletion Voltage Studiesmentioning

confidence: 99%

Radiation damage in the LHCb Vertex Locator

Harrison

2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

View full text Add to dashboard Cite

The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately 45 × 10 12 1 MeV neutron equivalent (1 MeV n eq ). At the operational sensor temperature of approximately −7 • C, the average rate of sensor current increase is 18 µA per fb −1 , in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of E g = 1.16±0.03±0.04 eV obtained. The first observation of n + -on-n sensor type inversion at the LHC has been made, occurring at a fluence of around 15×10 12 of 1 MeV n eq . The only n + -on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately 3 × 10 12 1 MeV n eq , a decrease in the Effective Depletion Voltage (EDV) of around 25 V is observed, attributed to oxygen induced removal of boron interstitial sites. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n + -on-n type sensors, with rates of (1.43 ± 0.16) × 10 −12 V/ 1 MeV n eq and (1.35 ± 0.25) × 10 −12 V/ 1 MeV n eq measured for n + -on-p and n + -on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.

show abstract

“…In this sense, two solutions have been considered in the design of the peripheral region: the P-Spray [13] and the P-Stop [14], as drawn in Fig. 15.…”

Section: D) P-spray and P-stopmentioning

confidence: 99%

Design and fabrication of an optimum peripheral region for low gain avalanche detectors

Fernández-Martínez

Flores

Hidalgo

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

Self Cite

View full text Add to dashboard Cite

Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current.This work deals with the critical technological aspects when optimising the LGAD structure. The impact of several design strategies for the device periphery is evaluated with the aid of TCAD simulations, and compared with the experimental results obtained from the first LGAD prototypes fabricated at the IMB-CNM clean room. Solutions for the peripheral region improvement are also provided.

show abstract

Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

Cited by 34 publications

References 6 publications

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

Radiation damage in the LHCb Vertex Locator

Design and fabrication of an optimum peripheral region for low gain avalanche detectors

Contact Info

Product

Resources

About