Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

Zhou, Chunzhi; Warburton, W. K.

doi:10.1016/0168-9002(96)00429-9

Cited by 2 publications

(1 citation statement)

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“…The spectral response is related to the bandgap of the material used and the material absorption coefficient [8]. Some fabrication techniques such as ion implantation and thermal deposition are also effective on device performance [9]. Although the cost-effective ion implantation method is used to control the doping rates and the doping is easier, the lowcost thermal doping method is preferred.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of Si-PIN photodiodes

Doğanci¹,

Kaya²,

Aktağ³

et al. 2019

Turk J Phys

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In this work, characteristics of silicon-based p + type, intrinsic (I), n − type (Si-PIN) photodiodes with active area of 3.5 × 3.5 mm 2 , 5.0 × 5.0 mm 2 , or 7.0 × 7.0 mm 2 and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NÜRDAM) of Bolu Abant İzzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivity measurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environment at room temperature. The measured values of the dark current (I dc) and the capacitance of photodiodes were-6.97 to-19.10 nA and 23 to 61 pF at-5 V, respectively. The quantum efficiency measurements of the devices increased up to 66%. P responsivity was found to be 0.436 ± 1 mA/W at 820 nm. The results indicate that the I dc current and the performance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications and commercial usage.

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Section: Introductionmentioning

confidence: 99%