Comparison of SOI FinFETs and Bulk FinFETs

Abstract

Bulk FinFETs and silicon-on-insulator (SOI) FinFETs were compared in terms of device structure, fundamental characteristics, speed characteristics, model, and application. Bulk FinFETs have shown several advantages over SOI FinFETs while keeping nearly the same scaling-down characteristics as those of SOI FinFETs. Compared to bulk FinFETs, SOI FinFETs could suppress any possible leakage between source and drain, and has low source/drain to substrate capacitance so that speed characteristics could be better. Since SOI FinFETs have two more corners in the bottom of the fin body than bulk FinFETs, bulk FinFETs can have less process variation. Both devices seem to have their specific applications.

Production and processing of graphene and 2d crystals

“…a tape adhesive at RT, but that peels off when heated), instead of PMMA or PTCDA, is more problematic, since tape residues can contaminate the transferred graphene 9 . There is some anecdotal evidence that the presence of residue has a beneficial effect on the nucleation of ALD dielectrics, such as Al 2 O 3 443 . However, this approach to prepare the graphene surface for ALD is not ideal, since the residues have uncontrolled chemical nature and are not uniform.…”

Nucleation and growth of WSe 2 : enabling large grain transition metal dichalcogenides

“…As a result, incomplete unit cells form when the rotationally aligned grains merge together [54]. These grain boundaries are, of course, expected to degrade carrier mobility [55][56][57]. The density of grain boundaries increases for samples with a high nucleation density.…”

Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs

“…Adjustment of V th by ion implantation also involves issues with complementary dopants, accurate depth and concentration control, diffusivity, implantation-induced damages, and random dopant fluctuations. Moreover, channel doping concentration has little effect on V th control for a thin gate dielectric and a fully-depleted thin-body channel 23 – 25 .…”