Comparison of SRIM, MCNPX and GEANT simulations with experimental data for thick Al absorbers

Evseev, Ivan; Schelin, H.R.; Paschuk, S.A.; Milhoretto, Edney; Setti, João Antônio Palma; Yevseyeva, Olga; Assis, Joaquim T. de; Hormaza, Joel Mesa; Diaz, Katherin Shtejer; Lopes, Ricardo Tadeu

doi:10.1016/j.apradiso.2009.10.019

Cited by 12 publications

(3 citation statements)

References 10 publications

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“…We compare both the linear model and the exponential model with our experimental results for Al ions. In our study, we have used the Monte Carlo simulation code SRIM [30] to calculate the stopping powers of a BAS-TR IP for Al ions because SRIM is known to represent the available experimental data well [31,32]. We show that the response function calculations using stopping power from SRIM code agree very well with our experimental data for Al ions up to 222 MeV.…”

Section: Introductionsupporting

confidence: 52%

Monte Carlo Study of Imaging Plate Response to Laser-Driven Aluminum Ion Beams

et al. 2021

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We measured the response of BAS-TR imaging plate (IP) to energetic aluminum ions up to 222 MeV, and compared it with predictions from a Monte Carlo simulation code using two different IP response models. Energetic aluminum ions were produced with an intense laser pulse, and the response was evaluated from cross-calibration between CR-39 track detector and IP energy spectrometer. For the first time, we obtained the response function of the BAS-TR IP for aluminum ions with a kinetic energy as high as 222 MeV. On close examination of the two IP response models, we confirm that the exponential model fits our experimental data better. Moreover, we find that the IP sensitivity in the exponential model is nearly constant in this energy range, suggesting that the response function can be determined even with little experimental data.

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Section: Introductionsupporting

confidence: 52%

Monte Carlo Study of Imaging Plate Response to Laser-Driven Aluminum Ion Beams

et al. 2021

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“…虽然中子、质子辐照碳化硅发生核反应时可能产生部分重离子, 但产生的都是中低能重离子, 不足以体现更高能量的重离子在碳化硅中的能量损失特性. 现有的研究表明碳化硅器件存在严重的单粒子栅穿(single event gate rupture, SEGR)和单粒子烧毁(single event burnout, SEB) 问题, 且碳化硅MOSFET和二极管存在单粒子烧毁阈值电压 [19−23] 列, 重离子在碳化硅中的射程分别使用SRIM软件 [24] 和Geant4软件计算得到. 从表1可以看到, 使用Geant4软件的计算结果与SRIM的计算结果有较好的一致性, 最大相差14.1%.…”

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Transport process and energy loss of heavy ions in silicon carbide

湘潭大学¹

2021

Acta Phys. Sin.

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Using the Monte Carlo method, the energy losses in silicon carbide of heavy ions with different linear energy transfers (LETs) are simulated and calculated. The simulation results show that the energy loss per unit depth of heavy ions in silicon carbide is affected by both the ion energy and the incident depth. Primary heavy ions and secondary electrons mainly cause energy loss, and the non-ionization energy loss only accounts for about 1% of the total energy loss. With the increase of LET, the initial angle and energy distribution of the secondary electrons become more and more concentrated. The peak position of the generated charge deposition is in the center of the heavy-ion track, and the distribution is linearly decreasing in Gaussian form in the direction perpendicular to the incident depth. In the californium source experiment of SiC MOSFET, when the drain voltage is 480 V, the device has a single event burnout, and the breakdown voltage of SiC MOSFET is less than 1 V after burnout has occurred. With the experimental results, we carry out the TCAD simulation of SiC MOSFET and obtain the electric field distribution inside the device under different drain voltages. The electric field parameters are used in the Monte Carlo simulation of SiC MOSFET with considering the metal layer. It is found in the Monte Carlo simulation that the greater the electric field of the epitaxial layer, the longer the path of heavy ions moving on the epitaxial layer is and the more the deposited energy, and that the secondary electrons are more likely to move in the direction of the electric field as the electric field increases, resulting in excessive energy deposition in local areas.

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“…In particular, we succeed to compare TRIM, MCNPX and GEANT4 simulations with the experimental spectra for a number of Al absorbers with various thicknesses for 19.68 MeV [7] and 49.1 MeV [8] protons passing through, for two Au targets and 49.1 MeV protons [9], and for polyethylene absorber and 25 MeV protons [10].…”

Section: Introductionmentioning

confidence: 99%

Reduced Calibration Curve for Proton Computed Tomography

Yevseyeva¹,

Assis²,

Evseev³

et al. 2010

AIP Conference Proceedings

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Abstract. The pCT deals with relatively thick targets like the human head or trunk. Thus, the fidelity of pCT as a tool for proton therapy planning depends on the accuracy of physical formulas used for proton interaction with thick absorbers. Although the actual overall accuracy of the proton stopping power in the Bethe-Bloch domain is about 1%, the analytical calculations and the Monte Carlo simulations with codes like TRIM/SRIM, MCNPX and GEANT4 do not agreed with each other. A tentative to validate the codes against experimental data for thick absorbers bring some difficulties: only a few data is available and the existing data sets have been acquired at different initial proton energies, and for different absorber materials. In this work we compare the results of our Monte Carlo simulations with existing experimental data in terms of reduced calibration curve, i.e. the range -energy dependence normalized on the range scale by the full projected CSDA range for given initial proton energy in a given material, taken from the NIST PSTAR database, and on the final proton energy scale -by the given initial energy of protons. This approach is almost energy and material independent. The results of our analysis are important for pCT development because the contradictions observed at arbitrary low initial proton energies could be easily scaled now to typical pCT energies.

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Comparison of SRIM, MCNPX and GEANT simulations with experimental data for thick Al absorbers

Cited by 12 publications

References 10 publications

Monte Carlo Study of Imaging Plate Response to Laser-Driven Aluminum Ion Beams

Monte Carlo Study of Imaging Plate Response to Laser-Driven Aluminum Ion Beams

Transport process and energy loss of heavy ions in silicon carbide

Reduced Calibration Curve for Proton Computed Tomography

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