Comparison of substrate effects in sapphire, trap-rich and high resistivity silicon substrates for RF-SOI applications

Sekar, Vikram; Cheng, Chih‐Chieh; Whatley, Richard; Zeng, Chang; Genç, Alper; Ranta, Tero; Rotella, F.M.

doi:10.1109/sirf.2015.7119867

Cited by 4 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Кроме того, КНС обладает лучшими изоляционными свойствами, чем КНИ, за счет наличия у последней паразитной поверхностной проводимости на границе раздела кремний-изолятор. Частично в КНИ этот недостаток решен введением дополнительного слоя, содержащего высокую плотность ловушек носителей, так называемый trap-rich layer (TR SOI) [36,38].…”

unclassified

Transistors for Solid-State Microwave Switches (A Review)

Torina

Kochemasov²,

Сафин

2023

Izv. vysš. učebn. zaved. Ross., Radioèlektron.

View full text Add to dashboard Cite

Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The desire to improve the parameters of switches has led to the emergence of devices based on various technologies. In order to elucidate the current trends and future prospects in the field of switch technologies, semiconductor devices that form the basis of switch circuits should be considered.Aim. To review transistor types used in solid-state switches.Materials and methods. The search and selection of literature sources for review was based on the chronological principle. The search depth for considering the parameters of finished components was no more than 10 years, for considering technologies and structural solutions – more than 10 years. This choice was explained by our desire to trace the history of development and approaches to the creation of semiconductor devices that have led to the emergence of the modern component base. The final array of sources comprised scientific publications presenting factual information on the objects under consideration.Results. The types, structures, materials, characteristics and manufacturing technologies of transistors used in switches are considered. The achievable parameters of the switches based on the considered devices are presented. Conclusion. The choice of a particular transistor type for switches depends on the requirements for the parameters and performance characteristics of the final device. At present, transistor solutions for switches are dominated by field-effect transistors (FETs) of various types: GaAs and GaN transistors with a high electron mobility (HEMT) and Si CMOS FETs implemented by standard as well as silicon-on-insulator and silicon-on-sapphire technologies. The conducted literature review has revealed prospects for the development of technologies based on BiCMOS heterojunction bipolar transistors.

show abstract

unclassified