We report a combined quantum-mechanics/molecular-mechanics (QM/MM) analysis of H 2 dissociation and hydrogendeuterium (H/D) exchange on four potential active sites inside the TS-1 pores: (1) Au 3 /T6-Ti-non-defect, (2) Au 3 /T6-Si-non-defect, (3) Au 3 /T6-Ti-defect, and (4) Au 3 /T6-Si-defect. We provide full kinetic and thermodynamic data calculated at standard conditions (298.15 K, 1 atm) for Eley-Rideal mechanisms on these sites. The H/D exchange on Au 3 /TS-1 occurs in two steps: (1) first H 2 dissociation on Au 3 /TS-1 to form H-Au 3 -H species and (2) D 2 (or second H 2 ) attack on these H-Au 3 -H species to form HD. The energetics of the first H 2 dissociation step is site-sensitive (with respect to Au sites), while that of the D 2 (or second H 2 ) addition step is not site-sensitive. We found that two different mechanisms for the second step are both kinetically and thermodynamically favorable. The most favorable mechanism (DE act $ 28 kcal/mol) involves an attack of D 2 on both the H atoms in the H-Au 3 -H intermediate, and two HD molecules are formed simultaneously. The first H 2 dissociation step is almost thermoneutral and the D 2 (or second H 2 ) addition step is somewhat exothermic. A comparison of the pure QM and QM/MM calculations on Au 3 /TS-1 suggests that the formation of the H-Au 3 -H species inside the TS-1 pores becomes thermodynamically more favorable due to the long-range interactions. The activation energies for the first H 2 dissociation step (19-24 kcal/mol) are lower than those for the D 2 (or second H 2 ) addition step (28-31 kcal/mol). Therefore, the increase in the HD formation rate with temperature is likely to be stronger than the increase in the H-Au 3 -H formation rate. On the basis of the calculated activation energies and the reaction thermochemistry, we predict a viable Eley-Rideal H/D exchange pathway that may operate at or above 573 K. We also found potential H/D exchange channels on bare TS-1 (without Au 3 ) where gas-phase D 2 (or second H 2 ) attacks the Ti-OH or Si-OH groups (of defect sites) and exchanges one of the D atoms to form HD and Ti-OD or Si-OD groups.