Comparison of the Extended Gate Field-Effect Transistor with Direct Potentiometric Sensing for Super-Nernstian InN/InGaN Quantum Dots

Abstract

We systematically study the sensitivity and noise of an InN/InGaN quantum dot (QD) extended gate field-effect transistor (EGFET) with super-Nernstian sensitivity and directly compare the performance with potentiometric sensing. The QD sensor exhibits a sensitivity of −80 mV/decade with excellent linearity over a wide concentration range, assessed for chloride anion detection in 10 –4 to 0.1 M KCl aqueous solutions. The sensitivity and linearity are reproduced for the EGFET and direct open-circuit potential (OCP) readout. The EGFET noise in the saturated regime is smaller than the OCP noise, while the EGFET noise in the linear regime is largest. This highlights EGFET operation in the saturated regime for most precise measurements and the lowest limit of detection and the lowest limit of quantification, which is attributed to the low-impedance current measurement at a relatively high bias and the large OCP for the InN/InGaN QDs.

A ZIF-67 derived Co3O4 dodecahedron shaped microparticle electrode based extended gate field-effect transistor for non-enzymatic glucose detection towards the diagnosis of diabetes mellitus

“…Additionally, this system can provide a sensitive response towards analytes, real-time detection, long-term stability, facile integration and packaging. 26,27 Also, on-chip integration in multisensor arrays for parallel sensing can be made possible with an EGFET. 28 In the recent past, a 4-carboxyphenyl boronic acid-modified RuO x on a polyethylene terephthalate (PET) substrate based EGFET sensor has been reported to detect glucose in the range from 1 to 8 mM measured at V ds = 100 mV, in the potential range of 0 to 3.5 V. 15 Mishra et al have reported on glucose detection covering the range of 1 mM to 12 mM using CuO nanowires grown on copper foil.…”

“…However, the EGFET gains advantage as it eliminates the usage of expensive counter electrodes. 25 It can be easily fabricated and integrated with point-of-care diagnostic systems. One of the most interesting features is that the MOSFET remains away from liquid contact, which avoids the penetration of liquid and hence, extended sensing electrodes can be reused multiple times.…”

“…Additionally, this system can provide a sensitive response towards analytes, real-time detection, long-term stability, facile integration and packaging. 26,27 Also, on-chip integration in multisensor arrays for parallel sensing can be made possible with an EGFET. 28…”

InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing

“…This electron distribution is also in origin of the super-Nernstian response of the InN/InGaN QDs in potentiometric ion sensing and biosensing. 29 , 30 …”

A Wearable Microneedle‐Based Extended Gate Transistor for Real‐Time Detection of Sodium in Interstitial Fluids

“…[30][31][32] Taking advantages of field-effect transistor (FET), extended gate (EG) FET-based biosensors can achieve fast response, low-cost scalability, high stability, durability, and longer-lasting use. [33,34] Here, we report a novel stretchable, stable, biocompatible, and minimally invasive biosensor design for continuous and real-time detection of sodium for health monitoring. The device relies on a new architecture of FETs whose sensing part and reference electrode rely on extended gate (EG) made of MNs that penetrate the skin to reach the ISF or measuring the sodium therein.…”