Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers

Hintikka, Mikko; Hallman, Lauri; Kostamovaara, J.

doi:10.1063/1.4999253

Cited by 5 publications

(11 citation statements)

References 29 publications

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“…One of the most popular solutions dedicated to high-power drivers utilizes single switching devices [1,2,6,7]. For this reason, the avalanche transistors for over 60 years [9] were the commonly used devices in laser pulsed generators [6,7].…”

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

“…For this reason, the avalanche transistors for over 60 years [9] were the commonly used devices in laser pulsed generators [6,7]. However, nowadays most of the modern systems utilize Field Effect Transistors (FET) [1,2]. The basic example topologies, shown in Figure 1, are based on charge storage passive elements.…”

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

“…In order to briefly analyze their principle of operation, a steady state (transistors are switched-off and storage elements are charged) is assumed. If the trigger signal is applied, the C C capacitor in Figure 1a is discharged through a semiconductor switch and a laser diode, resulting in an optical pulse of Gaussian shape [1,2]. The amplitude of the laser pulse is determined both by the +HV voltage applied to the driver, and the C C capacitance.…”

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

“…Nowadays, high-power short laser pulses are the subject of great interest in many fields of application, e.g., Light Detection and Ranging (LIDAR) [1,2], time resolved spectroscopy [3], or picosecond gain switched lasers [4]. The pulsed current source might also be applied to the electrically tunable Near Infra-Red (NIR) [4] or Quantum Cascade Lasers [5].…”

Section: Introductionmentioning

confidence: 99%

“…The direct modulation of the semiconductor laser current is a commonly used technique to produce fast optical pulses [1,2,[6][7][8] and has the advantage of simple and inexpensive operation. Many different topologies have been discussed so far [1,2,6,7]; however, noise parameters are rarely recalled. Considering those facts, a novel direct laser current modulator was designed and constructed resulting in the outstanding noise and switching properties.…”

Section: Introductionmentioning

confidence: 99%

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Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Żbik

Wieczorek

2019

Applied Sciences

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Most modern pulsed laser systems require versatile laser diode drivers. A state-of-the-art pulsed laser driver should provide precise peak power regulation, high repetition rate, and pulse duration control. A new, charge line dual-FET transistor circuit structure was developed to provide all these features. The pulsed modulation current is adjustable up to Imax = 1.2 A, with the laser diode forward voltage acceptable up to UF max = 20 V. The maximum repetition rate is limited by a charge line circuit to frep max = 20 MHz. Compared to the conventional single transistor drivers, the solution proposed in this paper allows a precise, high resolution width regulation to be obtained, whereas a low pulse jitter is ensured. In the solution, two separate, out-of-phase signals are used to trigger the individual Field Effect Transistors (FET). The resultant pulsed modulation current full-width-at-half-maxima (FWHM) is regulated from ~200 ps up to 2 ns. All control and timing signals are generated with a popular Field-Programmable Gate Array (FPGA) digital circuitry. The use of standard FPGA devices ensures the low cost and high reliability of the circuit, which are not available in laser drivers consisting of sophisticated analogue adjustable delay circuits.

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Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

Section: Dual-fet Output Stage Topologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Żbik

Wieczorek

2019

Applied Sciences

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Picosecond and high-power UV/Vis light pulsing using gallium nitride field-effect transistors: implementation and design evaluation

Henningsen,

Braam,

Danninger

2023

J. Inst.

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This paper discusses the development of cost-effective and high-performance picosecond and high-power light pulsers. The use of innovative gallium nitride field-effect transistor technology, in combination with meticulous electronic design and careful selection of light-emitting diodes or laser diodes for ultraviolet and visible spectral ranges, has resulted in superior characteristics compared to commonly used designs. The sub-ns design achieves pulse widths as low as 300 ps, with photon outputs ranging between 104-109 photons per pulse, over a wavelength range of 235-470 nm. Meanwhile, the high-power design achieves pulse widths as low as 1.8 ns, with photon outputs ranging between 107-1011 photons per pulse, and a wavelength range of 375-525 nm. The two designs complement each other in photon outputs, covering a dynamic range of almost ten orders of magnitude. This paper provides an evaluation of the electrical design and emitter selection of both pulsers, as well as their electrical and optical performance.

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Direct Time-of-Flight Single-Photon Imaging

Gyöngy

Dutton

Henderson

2022

IEEE Trans. Electron Devices

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This paper provides a tutorial introduction to the direct Time of Flight (dToF) signal chain and typical artifacts introduced due to detector and processing electronic limitations. We outline the memory requirements of embedded histograms related to desired precision and detectability which are often the limiting factor in the array resolution. A survey of integrated CMOS dToF arrays is provided highlighting future prospects to further scaling through process optimization or smart embedded processing. Index Terms-direct time-of-flight (dTOF), light detection and ranging (LiDAR), single photon avalanche diode (SPAD), silicon photo multiplier (SiPM), CMOS Image Sensor (CIS), SPAD array, 3D ranging

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Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers

Cited by 5 publications

References 29 publications

Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Charge-Line Dual-FET High-Repetition-Rate Pulsed Laser Driver

Picosecond and high-power UV/Vis light pulsing using gallium nitride field-effect transistors: implementation and design evaluation

Direct Time-of-Flight Single-Photon Imaging

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