Comparison of the Performance of the Memristor Models in 2D Cellular Nonlinear Network

Isah, Aliyu; Nguetcho, Aurélien Serge Tchakoutio; Binczak, Stéphane; Bilbault, Jean-Marie

doi:10.3390/electronics10131577

Cited by 8 publications

(9 citation statements)

References 54 publications

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“…The difference between linear and nonlinear models is highly observable as the state variable of system approaches 0 or 1. For a very small input voltage applied to the memristor, the linear and nonlinear models respond similarly because the state variable operates within the bulk of the device, not toward the edge [76]. The effect of increasing input frequency is shown for each model and the shrinkage of the pinched hysteresis loop area is due to the inverse relationship between the flowing charge q(t) and the input frequency ω (i.e., q(t) = I o ω ).…”

Section: Discussionmentioning

confidence: 99%

“…The effect of choosing a memristor model for a particular application was investigated [76]. It was shown that the amount of charge q R required for the memristance to fully transit from its high resistance state to the low resistance state and vice versa depends on the model under consideration, see Table 1.…”

mentioning

confidence: 99%

“…We are currently working on a memristor-based 2D cellular nonlinear network for signal and image processing as well as electronic prosthesis [76]. Figure 34 shows the schematic of the memristor-based 2D cellular nonlinear network using memristors in the coupling mode.…”

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confidence: 99%

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Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications

Isah

Bilbault

2022

JLPEA

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Circuit or electronic components are useful elements allowing the realization of different circuit functionalities. The resistor, capacitor and inductor represent the three commonly known basic passive circuit elements owing to their fundamental nature relating them to the four circuit variables, namely voltage, magnetic flux, current and electric charge. The memory resistor (or memristor) was claimed to be the fourth basic passive circuit element, complementing the resistor, capacitor and inductor. This paper presents a review on the four basic passive circuit elements. After a brief recall on the first three known basic passive circuit elements, a thorough description of the memristor follows. Memristor sparks interest in the scientific community due to its interesting features, for example nano-scalability, memory capability, conductance modulation, connection flexibility and compatibility with CMOS technology, etc. These features among many others are currently in high demand on an industrial scale. For this reason, thousands of memristor-based applications are reported. Hence, the paper presents an in-depth overview of the philosophical argumentations of memristor, technologies and applications.

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Section: Discussionmentioning

confidence: 99%

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confidence: 99%

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Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications

Isah

Bilbault

2022

JLPEA

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“…Resistive random access memory (ReRAM), flash memory, chaos circuits, biomimetic circuits, electrochemical metallization memories, magneto-resistive memory, cellular neural networks, recurrent neural networks, ultra-wideband receivers, adaptive filters, oscillators, programmable threshold comparators, Schmitt triggers, amplifiers, and logic gates have been developed based on memristor [14][15][16][17][18][19][20][21][22]. Different mathematical models of memristor have been reported in the literature; however, these models are not sufficiently accurate in terms of their physical dynamics [23][24][25][26][27][28]. The existence of metal and insulator at both interfaces are not considered in the memristor models.…”

Section: Introductionmentioning

confidence: 99%

Phenomenological modeling of memristor fabricated through screen printing based on the structure of Ag/Polymer/Cu

Zafar¹,

Awais²,

Shehzad³

et al. 2023

Preprint

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The attributes of a memristor such as non-volatile, simple structure, no leakage current, and fast switching speed have unfolded enormous opportunities for various analog and digital applications. It is imperative to develop an accurate physical model of the memristor in order to design digital applications. The hitherto published memristor modeling approaches do not match with the practical memristor dynamics. A new model is developed by considering Schottky contact at the metal-insulator-metal (MIM) interfaces. In this research work, a novel memristor is also fabricated to validate the proposed model. A bead polymer based on methyl methacrylate and n-butyl methacrylate (MMBM) is firstly used to explore the resistive switching properties of the device. A cost-effective screen printing technique is first demonstrated to deposit the resistive switching layer for the fabrication of the memristor. The resistive switching behavior is observed in the sandwiched layer with a silver (Ag) as a top electrode and copper (Cu) as a bottom electrode. Surface morphology and electrical characterizations of the fabricated device are carried out by scanning electron microscope and 2 probe resistivity measurement. The results validate the formation of the Schottky barriers at the MIM interfaces of the fabricated device. The proposed model is compared with the device described in this paper having an error of 0.7609 (in terms of the relative root-meansquare error). Moreover, the NOR logic gate is simulated for the circuit simulation of the proposed model. This will pave a new path for the digital design applications based on the memristor.

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“…Numerous studies have been devoted to the development of compact models of memristive elements [18][19][20][21][22][23][24]. Usually, depending on the purpose of the study, the proposed models are designed either to simulate bipolar switching processes, or to consider multilevel tuning of the conductivity of resistive memory elements.…”

Section: Introductionmentioning

confidence: 99%

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

2022

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The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiOx films (30 nm) and bilayer TiO2/Al2O3 structures (60 nm/5 nm) is demonstrated.

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Comparison of the Performance of the Memristor Models in 2D Cellular Nonlinear Network

Cited by 8 publications

References 54 publications

Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications

Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications

Phenomenological modeling of memristor fabricated through screen printing based on the structure of Ag/Polymer/Cu

Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

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