Comparison of the quantized hall resistance in different GaAs/Al/sub x/Ga/sub 1-x/As heterostructures

Jeckelmann, B.; Schwitz, W.; Bühlmann, H.‐J.; Houdré, R.; Ilegems, M.; Jucknischke, D.; Py, M.A.

doi:10.1109/tim.1990.1032924

Cited by 9 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A comprehensive study [ 171 of the AuGeNi-contact behaviour for eight GaAs/AlGaAs heterostructures shows contact resistances in the quantum Hall regime to be stable with time and thermal cycling, and with values in the range lOmR to 50mrZ. It was concluded [18] that this level of contact resistance does not affect the precision of the quantized Hall resistance within the measurement uncertainty of 3 parts in lo9.…”

Section: Device Constructionmentioning

confidence: 99%

The Quantum Hall Effect and Resistance Standards

Hartland

1992

Metrologia

View full text Add to dashboard Cite

Following the discovery of the quantum Hall effect in 1980 metrologists were eager to develop the effect as a resistance standard in a similar manner to the development, a decade earlier, of the Josephson effects in superconductors as a voltage standard. This article reviews the progress made by many national laboratories to assess and compare the quality and limitations of semiconductor devices, mainly silicon MOSFETs and GaAs/AlGaAs heterostructures, as quantized Hall resistance standards with values RH (i) = RK/i = h/ie2, where RK = 25812,807 Ω is the von Klitzing constant and i is an integer. Potentiometric and cryogenic current comparator bridge techniques for the measurement of RK in terms of conventional resistance standards with 1 σ relative accuracies better than 1 part in 108 are compared, and determinations of RK in ohms with accuracies as high as 2,4 parts in 108 using calculable capacitors are described. The comparison of direct determinations of RK with alternative derivations of h/e2 leading to the CCE recommendations and subsequent international adoption, from 1 January 1990, of the value 25812,807 ± 0,005 Ω for RK are also described.

show abstract

Section: Device Constructionmentioning

confidence: 99%