Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

Sadik, Diane-Perle; Colmenares, Juan Carlos; Lim, Jang‐Kwon; Bakowski, Mietek; Nee, Hans‐Peter

doi:10.1109/tie.2020.2972442

Cited by 19 publications

(7 citation statements)

References 34 publications

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“…The thicknesses are 4, 3 and 100 μm, respectively. The doping profile of the p well is retrograde, featuring a lower surface doping of 5x10 17 and a maximum doping concentration of 1.8×10 18 𝑐𝑚 -3 at a depth of 0.5 μm, which gradually reduces to 3×10 14 𝑐𝑚 -3 at a depth of 2 μm as shown in Fig. 1(c).…”

Section: Device Structure Modeling and Simulationmentioning

confidence: 95%

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Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Almpanis

Evans

Antoniou

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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This paper presents a comprehensive shortcircuit robustness investigation of 4H-Silicon Carbide (SiC) ntype Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High-Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT shortcircuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latchup and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K.

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Section: Device Structure Modeling and Simulationmentioning

confidence: 95%

“…• The carrier generation also increases with temperature contributing to the conduction of the device. According to [18], a temperature of more than 1400C is required to generate a carrier concentration of about 3.5x10 15 cm -3 .…”

Section: A Parasitic Thyristor Latching During Steady-statementioning

confidence: 99%

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Almpanis

Evans

Antoniou

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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“…The exact temperature distribution across the whole volume of the die depends on the type of device [49] and looks similar for transients and steady state, although with different temperature values [50]. However, the hotspots would be located close to the top surface for SiC MOSFETs and SiC JFETs [49]. Consequently, application of technologies from Fig.…”

Section: Challenges For Oc: Packaging Materialsmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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“…External power to the GDUs could also enable the use of normally-ON semiconductor devices in the high-power sector. SiC JFETs, for example, even though offering superior robustness [28], switching performance, and low specific onstate resistance [29], have been less favourable choices for power switches in the past, since a loss of GDU power results in a short circuit of the submodule capacitor.…”

Section: A Sources Of Auxiliary Supply Voltagementioning

confidence: 99%

Auxiliary Power Supplies for High-Power Converter Submodules: State of the Art and Future Prospects

Heinig

Jacobs

Ilves

et al. 2022

IEEE Trans. Power Electron.

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Recent developments in medium-voltage (MV) silicon and silicon carbide (SiC) power semiconductor devices are challenging state-of-the-art converter and auxiliary power supply (APS) designs. The APS is an important converter component, which energizes the gate-drive units and, therefore, has an influence on the overall reliability and efficiency of the converter system. There has, however, been comparably little research on how the APS of high-power converter submodules can be realized, in particular for high-voltage (HV) applications. New, or improved, solutions may build on state-of-the-art topologies in the near future, but utilize MV SiC technology in the APS circuit itself to enable improved efficiency, reliability, simplicity, and compactness. Externally-fed APS concepts could provide several further advantages. Their various benefits on converter and system level may enable them to be a competitive solution for future APS concepts. Especially light-based power supply systems are considered most useful since they offer extreme voltage isolation capability and immunity to electromagnetic interference.This article presents a review of the wide range of solutions for APSs, possible implementation options, and the most important design considerations. The different solutions are evaluated in a qualitative fashion, providing an overview of available APS concepts with regard to the requirements for high-power converter applications.

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Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

Cited by 19 publications

References 34 publications

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Auxiliary Power Supplies for High-Power Converter Submodules: State of the Art and Future Prospects

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