Comparison of thermoelectric properties of GaN and ZnO samples

Küçükgök, Bahadir; Wang, B.; Melton, Andrew; Lü, Na; Ferguson, Ian T.

doi:10.1002/pssc.201300538

Cited by 25 publications

(21 citation statements)

References 13 publications

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“…The average value of R GaN , |S | GaN and μ (from nine dies of the reference) are 1450 Ω, 715 μV K −1 and 260 cm 2 V −1 s −1 at n = 4.8 × 10 16 cm −3 , respectively. |S | GaN coincides with a previously reported value . The measured data for R measured , R C are listed in Table along with and calculated values of R 2DEG .…”

Section: Resultssupporting

confidence: 89%

Thermoelectric enhancement in the two-dimensional electron gas of AlGaN/GaN heterostructures

Nagase

Takado

Nakahara

2015

Phys. Status Solidi A

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Thermoelectric (TE) devices are fabricated using AlGaN/GaN heterostructures, which are epitaxially grown on sapphire substrates by metal‐organic chemical vapor deposition. The epilayers are processed to form 3 × 3 mm2 square‐shaped TE devices. These devices include two‐dimensional electron gas produced by electric polarization discontinuity naturally formed at AlGaN/GaN interface, and thereby exhibit that Seebeck coefficients (S) are positively correlated with their carrier concentration (n) in n ≳ 4 × 1019 cm−3. In contrast, TE devices made from bulk materials generally exhibit a negative correlation between S and n.

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Section: Resultssupporting

confidence: 89%

Thermoelectric enhancement in the two-dimensional electron gas of AlGaN/GaN heterostructures

Nagase

Takado

Nakahara

2015

Phys. Status Solidi A

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“…It is a nontoxic, low-cost, and earth-abundant material which is stable at a high temperature. These properties make it a promising candidate for n-type TE materials for energy harvesting in hightemperature applications [88][89][90] ), due to the high crystal quality resulting in a large Seebeck coefficient (~478 μV/K) [91]. Figure 6 presents the temperature-dependent PF of ZnObased TE materials.…”

Section: Zno-basedmentioning

confidence: 99%

Metal oxides for thermoelectric power generation and beyond

Feng

Jiang

Ghafari

et al. 2017

Adv Compos Hybrid Mater

119

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Metal oxides are widely used in many applications such as thermoelectric, solar cells, sensors, transistors, and optoelectronic devices due to their outstanding mechanical, chemical, electrical, and optical properties. For instance, their high Seebeck coefficient, high thermal stability, and earth abundancy make them suitable for thermoelectric power generation, particularly at a high-temperature regime. In this article, we review the recent advances of developing high electrical properties of metal oxides and their applications in thermoelectric, solar cells, sensors, and other optoelectronic devices. The materials examined include both narrow-band-gap (e.g., Na x CoO 2 , Ca 3 Co 4 O 9 , BiCuSeO, CaMnO 3 , SrTiO 3 ) and wide-band-gap materials (e.g., ZnO-based, SnO 2 -based, In 2 O 3 -based). Unlike previous review articles, the focus of this study is on identifying an effective doping mechanism of different metal oxides to reach a high power factor. Effective dopants and doping strategies to achieve high carrier concentration and high electrical conductivities are highlighted in this review to enable the advanced applications of metal oxides in thermoelectric power generation and beyond.

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“…The highest absolute value of Seebeck coefficient for thin film GaN is around 500 μV/K and this occurs at low carrier concentrations. 99 The optimization of TE materials requires the decoupling of the electrical and thermal properties of the material to give the highest value of the figure of merit, ZT. One approach has been used of InN/GaN nanowire structures which have a higher electrical conductivity and lower thermal conductivity than that of GaN.…”

Section: The Iii-nitrides For Thermoelectric Energy Harvestingmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Comparison of thermoelectric properties of GaN and ZnO samples

Cited by 25 publications

References 13 publications

Thermoelectric enhancement in the two-dimensional electron gas of AlGaN/GaN heterostructures

Thermoelectric enhancement in the two-dimensional electron gas of AlGaN/GaN heterostructures

Metal oxides for thermoelectric power generation and beyond

Review—The Current and Emerging Applications of the III-Nitrides

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