Comparison of ultra-shallow junctions with PLAD and beamline implantation

Felch, S.B.; Arevalo, E.A.; Walther, S.; Fang, Z.; Koo, B.W.; Liebert, R.B.; Lenoble, D.; Grouillet, A.

doi:10.1109/.2000.924194

Cited by 2 publications

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“…Finally, it should be mentioned that plasma doping (PLAD) with a BF 3 plasma and pulse voltages between 200 and 5000 V results in better device characteristics for ultra-shallow junctions than conventional beamline implantation [50], which indicates a significant role of surface adsorption or electron bombardment in that application.…”

Section: Discussionmentioning

confidence: 99%

Polarisation-independent modulation of laser radiation by the acoustooptic interaction

Котов

1994

Quantum Electron.

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Plasma based ion implantation at elevated temperatures is a technology often used to obtain thick surface layers of several µm by thermally activated diffusion, e.g. nitrogen in steel, titanium or aluminium. By lowering the pulse voltage at constant temperature, the current density can be increased at a constant heat flow. However, an upper limit is given by the ratio of the diffusion rate transporting the implanted ions from the surface towards the bulk and the sputter yield. This sputtering of the surface dominates for very high current densities and limits the maximum achievable layer thickness. Different maximum current densities were found for the four investigated systems-nitrogen in different steel grades, aluminium and titanium, as well as oxygen in titanium-reflecting the varying diffusivities. Additional requirements, besides the maximum current density, as a conformal treatment for complex objects containing small holes or trenches, as well as short heating times, can be solved most effectively by pulsed voltages in the range of 2-5 kV and an additional heating of the sample. The problem of a sample cooling time of several hours after the treatment is recognized. A partial solution would be to increase the gas pressure during the cooling phase for a more effective heat dissipation.

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Section: Discussionmentioning

confidence: 99%

Polarisation-independent modulation of laser radiation by the acoustooptic interaction

Котов

1994

Quantum Electron.

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“…Both the as-implanted and the spike-annealed wafer results show shallower profiles for PLAD than for the expected equivalent BF2'. Evidence of boron clustering has been found in regions of high B concentration during the anneals and it is thought that the spike anneals are too short to dissolve them completely, resulting in shallower annealed implants for PLAD compared to both BF; and B' beamline results at equivalent energies [7].…”

Section: Ultra-shallow Junction Implantsmentioning

confidence: 99%

Plasma doping as a tool for the fabrication of ultra-shallow junctions

Liebert

Walther²,

Felch³

et al.

Extended Abstracts of the First International Workshop on Junction Technology (IEEE Cat. No.00EX464)

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In the plasma doping technique a plasma is created near a substrate and a voltage applied to that substrate causes ions to be extracted across the plasma sheath and implanted. The method has been considered a potential altemative to conventional beamline ion implantation because of its high throughput and simpler, smaller architecture. Recent work has shown that the method can be applied to the production of ultra-shallow junctions. Junctions have been made which offer tradeoffs between electrical activation and junction depth that are better than those achieved for beamline implants. Use of the technique in combination with SPE anneals offers the promise of further improvements.

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Comparison of ultra-shallow junctions with PLAD and beamline implantation

Cited by 2 publications

References 0 publications

Polarisation-independent modulation of laser radiation by the acoustooptic interaction

Polarisation-independent modulation of laser radiation by the acoustooptic interaction

Plasma doping as a tool for the fabrication of ultra-shallow junctions

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