Comparison of Various Body Contact MOSFETs on Single Event Transients in 130 nm Partially Depleted SOI Process

Abstract

Many papers show that floating-body devices have longer single-event transient(SET) than devices with bodycontact in SOI process. There are two main reasons for this phenomenon, one is because the Propagation Induced Pulse Broadening (PIPB) effect causes the pulsebroadening as the single-event transient propagates through the circuit which may affect the SET measuring results, and another is floating-body devices intrinsic lower vulnerability of SET. In previous papers, someone using TCAD simulation to prove that SOI device with and without body contact have identical SET sensitivity. However, they have no actual measurement result validating this similarity. In this work, we implement multiple identical short inverter chain in parallel to measure SET pulses avoiding PIPB effect, which demonstrates that the single-event transient vulnerability of SOI device with and without body-contact is similar and the main cause of SET pulse in floating-body devices becoming wider is the effect of PIPB. Results show that under a constant LET of 37.6 MeV-cm 2 /mg, singleevent transient pulse widths for 130nm PDSOI device ranges from 210 to 735 ps.