Comparison of various low dielectric constant materials

Cheng, Yi-Lung; Lee, Chih-Yen; Hung, Wei-Jie; Chen, Giin-Shan; Fang, Jau–Shiung

doi:10.1016/j.tsf.2018.02.042

Cited by 40 publications

(19 citation statements)

References 36 publications

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“…Figure 4 plots the leakage current density versus the applied field (I-E) curves of porous low-k SiOCH films with the CuNd metal gate before and after annealing. Similar to our previous work [18,19], the I-E curves of porous low-k SiOCH films with CuNd metal gate exhibited three stages. In the first stage, the leakage current increased with the applied field.…”

Section: Resultssupporting

confidence: 85%

“…Additionally, its shift tended toward negative voltage, showing that positively charged defects were introduced into the test MIS capacitor during an annealing. These introduced positively-charged defects in the annealed Cu-gate MIS capacitor have been widely reported to be Cu ions [19]. A barrier layer, therefore, is required between the Cu and the porous low-k SiOCH film.…”

Section: Resultsmentioning

confidence: 99%

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Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

et al. 2020

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In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 • C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

et al. 2020

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“…Subsequently, a 2-nm-thick layer of Mn2O3 was deposited onto p-SiOCH(N) through a shadow mask by sputtering a Mn target under a controlled Ar/O2 oxidative atmosphere. The resultant sample, denoted as Mn2O3/p-SiOCH(N)/Si, was subjected to stabilization annealing at 450°C in an Ar/H2 (5%) forming gas for 60 min, converting the Mn2O3 to Mn2O3-xN [16]. Finally, a 50-nm-thick Cu film was thermally evaporated onto the stacked sample also through a shadow mask.…”

Section: Methodsmentioning

confidence: 99%

“…In light of the aforementioned studies of metal-based barriers, we have recently proposed a novel barrier process for Cu metallization [16] by firstly performing high-pressure nitrogen stuffing of a porous low-k SiOCH dielectric. Then, a 2-nm-thick Mn oxide film was deposited in a controlled (oxygen-containing) sputtering gas.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/ Mn2O3-xN/Cu Integration

Cheng¹,

Lin²,

Lee³

et al. 2019

Preprint

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In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3-xN film, an additional annealing at 450°C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3-xN/p-SiOCH(N)/Si structure is investigated. The proposed Cu/Mn2O3-xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricted stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other MIS capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequent, the proposed Cu/Mn2O3-xN/p-SiCOH(N) scheme is a promising integrity for back-end-of-line interconnects.

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“…Meanwhile, the integration of the circuit is getting higher and higher, which will cause the interconnect delay of the circuit to increase gradually [3,4] and the application of electronic, especially 5G communication technology and higher frequency communication technology will be influenced by a series of problems (such as delay in signal transmission, noise interference and increased power loss) in medical industry, machinery industry and other fields. To solve these problems, the high-performance low-k and low electromagnetic radiation materials [5][6][7], in particular the polymers with intrinsic low-dielectric-constant have paid much attention in recent years. It is beneficial to reducing signal delay, decreasing power consumption and improving the signal transmission speed [8].…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of polyethersulfone copolymers containing bisphenol S and six fluorine hexafluorobisphenolA (6AF) segments

Xia

Zheng

et al. 2020

J Polym Res

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In this study, a series of fluorinated polyethersulfone (PES-6AF) copolymers with intrinsic low-dielectric-constants are prepared by the introduction of fluorine-containing group, which are derived from the polycondensation reaction of 4,4′-dichlorophenyl sulfone (DCS), bisphenol S (BPS) and six fluorine hexafluorobisphenolA (6AF) compounds by nucleophilic aromatic substitution. Different proportions of PES-6AF copolymers show high glass transition temperatures (T g) ranging from 206°C to 230°C, and the thermal decomposition temperatures of PES-6AF copolymers are up to 500°C under N 2 atmospheres. The PES-6AF copolymers display outstanding tensile strength (62-69 MPa). Added different proportions of 6AF into the PES-6AF copolymers could improve dielectric property and decrease dielectric constant (k) from 3.6 to 2.5 at 1 kHz. In addition, the dielectric properties were found to be relatively stable until the T g , it is because that the 6AF units were existed in the molecular backbone. Furthermore, the PES-6AF copolymers were soluble in many common solvents and could be made the molten films using DMF as solvent.

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Comparison of various low dielectric constant materials

Cited by 40 publications

References 36 publications

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-<em>k</em> SiOCH/ Mn<sub>2</sub>O<sub>3-x</sub>N/Cu Integration

Dielectric properties of polyethersulfone copolymers containing bisphenol S and six fluorine hexafluorobisphenolA (6AF) segments

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