Comparison of X-band MESFET and HBT class-E power amplifiers for EER transmitters

Pajic, S.; Wang, N.; Popović, Zoya

doi:10.1109/mwsym.2005.1517144

Search citation statements

Order By: Relevance

Paper Sections

Select...

Discussion1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2006

2016

Publication Types

Select...

Other1

Book1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A trade-off with a relatively low power gain exists. Nevertheless, it is important to mention that other efficient single-stage class-E PAs operating at microwave frequencies have also shown a peak large signal power gain of approximately 1OdB or less [14,15,20].…”

Section: Discussionmentioning

confidence: 99%

A 60GHz Class-E Power Amplifier in SiGe

Valdes‐Garcia

Reynolds²,

Pfeiffer³

2006

2006 IEEE Asian Solid-State Circuits Conference

View full text Add to dashboard Cite

A millimeter-wave Class-E tuned power amplifier is realized in 0.13im SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match. The prototype IC is a single-ended single stage design that operates from a 1.2V supply and employs an area of 0.98mm2. Measurement results show a saturated output power >11.ldBm with peak PAE>15% from 55-60GHz. At 58GHz it achieves a peak PAE of 20.9%, peak power gain of 4.2dB and saturated output power of 11.7dBm.

show abstract

Section: Discussionmentioning

confidence: 99%