2018
DOI: 10.1063/1.5025516
|View full text |Cite
|
Sign up to set email alerts
|

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Abstract: Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young’s modulus, indentation fracture toughness and the resistance… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
3
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 23 publications
1
3
0
Order By: Relevance
“…It has been experimentally established that the hardness of silicon wafers (according to Vickers) increases by 1.2 times after strong phosphorus doping [45]. This result is consistent with our average 4.2% increase in the binding energy of lithium with the substrate after the phosphorus-doping of silicene.…”
Section: Discussionsupporting
confidence: 91%
“…It has been experimentally established that the hardness of silicon wafers (according to Vickers) increases by 1.2 times after strong phosphorus doping [45]. This result is consistent with our average 4.2% increase in the binding energy of lithium with the substrate after the phosphorus-doping of silicene.…”
Section: Discussionsupporting
confidence: 91%
“…It has been reported in the literature that the maximum solid solubility of As (1.8×10 21 cm −3 ) is higher than that of P (1.3×10 21 cm −3 ) in silicon. Moreover, in the c-Si, the distribution coefficient of P (0.35) is comparatively higher than that of As (0.3), and the evaporation rate of P (1.4×10 −4 cm s −1 ) is smaller than that of As (8×10 −3 cm s −1 ) [24]. As a consequence, for a similar diffusion environment the sheet resistance of silicon with the P-diffusion is lower by a factor of five as compared to that obtained with the As-diffusion [23].…”
Section: Effect Of Dopants On Emitter Formationmentioning
confidence: 90%
“…The diffusion of n-type dopants at much higher concentrations compare to the background doping level of the base, turns the surface region into n-type Si resulting in a p-n junction. Group fifth elements such as phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi) are used as pentavalent (ntype dopants) impurities in the silicon device industry [23][24][25][26][27]. The choice of proper impurity dopants is one of the important factors that govern the quality of the emitter.…”
Section: Effect Of Dopants On Emitter Formationmentioning
confidence: 99%
“…(2 mol%) to Z8 (8 mol%), and then decreases slightly for Z10 (10 mol%), which was apparently due to the decrease in packing density [35,36]. It means there was breaking of some P-O-Zn bonds per volume in the glass network during the application of load, which led to a decrease in the resistance of deformation.…”
Section: Vickers Hardness and Fracture Toughnessmentioning
confidence: 99%