Comparison on TiO<inf>2</inf> and TaO<inf>2</inf> based bipolar resistive switching devices

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

“…This article is organized as follows: Section 2 describes the electroformation process in general and also specifically for both structure types of memristive devices; Section 3 explains the switching mechanisms, and compares the switching speeds and energy requirements; Section 4 discusses resistance state non-linearity, resistance state stability and resistance ratio; Section 5 explains the difference in retention capability and endurance of the memristive devices; Section 6 studies the effect of varying electrode cross-sectional area and bulk thickness; and Section 7 summarizes this article. This article is also an extension of the article in Reference [25].…”