Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2 (001) and Si(001)

Gu, Changzhi; Jiang, Xuebin; Kappius, L.; Mantl, S.

doi:10.1063/1.372086

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…Diamond deposition was reported on polycrystalline CoSi 2 substrates. [53][54][55] The diamond film grown on CoSi 2 /Si substrate by bias enhanced MPCVD showed high nucleation density of ,10 9 cm 22 with a positive biasing, which was much higher than with negative biasing.…”

Section: Nucleation On Intermediate Layer Of Graphitementioning

confidence: 98%

A review of nucleation, growth and low temperature synthesis of diamond thin films

Das¹,

Singh²

2007

International Materials Reviews

149

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Diamond thin films have outstanding optical, electrical, mechanical and thermal properties, which make these attractive for applications in a variety of current and future systems. In particular, the wide band gap, optical transparency and unusually high thermal conductivity of diamond thin films make them an ideal semiconductor for applications in current and future electronics. However, synthesis of diamond thin films with adequate quality remains a challenging task. Synthesis of diamond at low temperatures is even more challenging because of the difficulties in the nucleation and growth steps involved in diamond thin film deposition on a variety of substrates. Among the several deposition techniques for synthesising diamond films, plasma enhanced chemical vapour deposition is the most promising technique because of its potential for low temperature synthesis. Consequently, the first part of this paper reviews the current state of the nucleation and growth of diamond during chemical vapour deposition. A uniform and high nucleation density is a prerequisite for getting a good quality diamond film with significant growth rate. Also, since the process conditions for nucleation and growth steps are different, attempts are made in this review to identify the important parameters responsible for enhancing the nucleation and growth rates of diamond film. Describing the indispensable need for low temperature growth of diamond film, the second part of the paper reviews the research on the growth of diamond thin films at low temperatures. In spite of the slower kinetics at lower deposition temperatures, an attempt is made to identify the key processing conditions, which enhance the low temperature growth process. In addition, the mechanisms of diamond nucleation and growth are discussed based on the observations from in situ characterisation techniques such as Fourier transform infrared reflection absorption spectroscopy, real time spectroscopic ellipsometry and molecular beam mass spectroscopy.

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Section: Nucleation On Intermediate Layer Of Graphitementioning

confidence: 98%

A review of nucleation, growth and low temperature synthesis of diamond thin films

Das¹,

Singh²

2007

International Materials Reviews

149

View full text Add to dashboard Cite

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“…2a and 2b show the surface morphology of 5-μm-thick diamond films with random orientation and (001)-texture, respectively, on a 68 nm-thick CoSi 2 layer. Even though the lattice mismatch of CoSi 2 is about 1.2% relative to Si at room temperature, the textured diamond growth presents different characteristics on Si and CoSi 2 9 . Further, epitaxially (001)-oriented film growth like that obtained on Si (001) 11 12 can not be achieved on CoSi 2 .…”

Section: Resultsmentioning

confidence: 98%

“…CoSi 2 can also be used as an interconnect conductor in semiconductor devices and is an active material for developing devices with dimensions in nanometers. In a previous work, we succeeded in depositing (001) textured as well as randomly oriented diamond films with high quality on CoSi 2 , and studied the comparable nucleation and growth characteristics of CVD diamond on CoSi 2 and Si 9 .…”

mentioning

confidence: 99%

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

Jiang

et al. 2012

Sci Rep

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Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

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“…Previous work by Arnault et al [7] shows that diamond deposited on CoSi 2 by hot-filament CVD is preceded by the formation of a SiC layer. Gu et al [8] have recently reported that high-quality textured diamond films can be grown on CoSi 2 with BEN pretreatment. Here, we demonstrate that the positive biasing effect on diamond deposition is different from the negative one through microstructural characterization.…”

Section: Introductionmentioning

confidence: 99%

Diamond growth on CoSi2/Si by bias-enhanced microwave plasma chemical vapor deposition method

Chen

Chang

et al. 2001

Materials Chemistry and Physics

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Diamond was grown on polycrystalline CoSi 2 /Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼10 9 cm −2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi 2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi 2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.

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Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2 (001) and Si(001)

Cited by 3 publications

References 13 publications

A review of nucleation, growth and low temperature synthesis of diamond thin films

A review of nucleation, growth and low temperature synthesis of diamond thin films

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

Diamond growth on CoSi2/Si by bias-enhanced microwave plasma chemical vapor deposition method

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