Comparisons of HFCVD diamond nucleation and growth using different carbon sources

Wang, Xinchang; Sun, Fei; Shen, Bin

doi:10.1016/j.diamond.2014.11.009

Cited by 24 publications

(4 citation statements)

References 36 publications

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“…Due to the higher oxygen content in the substrate associated with the lower diamond grain size, it is expected that nanometric (220) plane develops faster than the others. In this case, the results differ from the literature and we conclude that the oxygen from the substrate is reacting with the boron, decreasing both substances in the system, which favorably leads to a predominant [111] texture [33,35].…”

Section: Xrd and Raman Spectroscopy Characterizations Of B-uncd Filmscontrasting

confidence: 84%

Influence of modified carbon substrate on boron doped ultrananocrystalline diamond deposition

Oishi

Silva

Botelho

et al. 2018

Mater. Res. Express

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Boron doped ultrananocrystalline diamond (B-UNCD) growth was studied on modified reticulated vitreous carbon (RVC) produced from poly(furfuryl alcohol) (PFA) resin with sodium hydroxide additions at two different heat treatment temperatures. The different amounts of NaOH in PFA (up to reaching pH values of around 3, 5, 7, and 9) aimed to neutralize the acid catalyst and to increase the PFA storage life. Besides, this procedure was responsible for increasing the oxygen content of RVC samples. Thus, the effect of carbon and oxygen coming from the substrates in addition to their different graphitization indexes on diamond morphology, grain size, preferential growth and boron doping level were investigated by FEG-SEM, x-ray diffraction and Raman spectroscopy. Therefore, B-UNCD films were successfully grown on RVC with pH values of 3, 5, 7, and 9 heat treated at 1000 and 1700°C. Nonetheless, the higher oxygen amount during B-UNCD growth for samples with pH 7 and 9 heat treated at 1000°C was responsible for the RVC surface etching and the decrease in the boron concentration of such samples. The cross section images showed that B-UNCD infiltrated at around 0.9 mm in depth of RVC samples while carbon nanowalls were observed mainly on RVC samples heat treated at 1000°C for all pH range studied.

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Section: Xrd and Raman Spectroscopy Characterizations Of B-uncd Filmscontrasting

confidence: 84%

Influence of modified carbon substrate on boron doped ultrananocrystalline diamond deposition

Oishi

Silva

Botelho

et al. 2018

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

“…The surface morphology and cross-sections images of the as-deposited films were obtained by scanning electron microscopy (SEM, Hitachi-S4800) and atomic force microscopy (AFM) to characterize the deposition rate and surface quality. The average growth rate was calculated by dividing the thickness by the deposition time [8,9,15,16]. The microstructure of the samples was analysed using a Renishaw inVia Raman spectrometer with an excitation wavelength of 532 nm.…”

Section: Introductionmentioning

confidence: 99%

Growth rate and surface free energy of diamond films using different gas-sources

Tian

Sun

et al. 2019

Surface Engineering

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For diamond multilayer structure film (low residual stress and good toughness), the monolayer thickness and surface properties have an important effect on the quality of multilayer film. Therefore, the influence of deposition parameters on the quality, growth rate and surface free energy of diamond films was investigated in CH 4 /H 2 , CH 4 /H 2 /Ar and CH 4 /H 2 /N 2 respectively. The results show that the nano-crystalline diamond films can be prepared in three different gas sources. The growth rate significantly increases with increasing CH 4 and N 2 content, but it increased at first and then decreased with increasing the Ar content. Surface roughness shows a downward trend with increasing of CH 4 and Ar, as well as the addition of N 2 . The surface free energy decreases with the decrease of the surface roughness and film purity. Finally, the average growth rate and surface free energy of the nanocrystalline diamond film can be controlled by adjusting the deposition parameters.

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“…In order to reduce the usage of hazardous gas, the investigator tries to use the liquid diffusion as a carbon source for synthetic diamond films. For example, the diamond films were synthesized by using ethanol and acetone as the carbon source [ 12 , 13 ]. But it is obvious that the high-purity H 2 is a necessary feed gas.…”

Section: Introductionmentioning

confidence: 99%

Novel Diamond Films Synthesis Strategy: Methanol and Argon Atmosphere by Microwave Plasma CVD Method Without Hydrogen

et al. 2016

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Diamond thin films are grown on silicon substrates by only using methanol and argon mixtures in microwave plasma chemical vapor deposition (MPCVD) reactor. It is worth mentioning that the novel strategy makes the synthesis reaction works smoothly without hydrogen atmosphere, and the substrates temperature is only 500 °C. The evidence of surface morphology and thickness under different time is obtained by characterizing the samples using scanning electron microscopy (SEM). X-ray diffractometer (XRD) spectrum reveals that the preferential orientation of (111) plane sample is obtained. The Raman spectra indicate that the dominant component of all the samples is a diamond. Moreover, the diamond phase content of the targeted films was quantitatively analyzed by X-ray photoelectron spectroscopy (XPS) method, and the surface roughness of diamond films was investigated by atomic force microscope (AFM). Meanwhile, the possible synthesis mechanism of the diamond films in methanol- and argon-mixed atmosphere was discussed.

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Comparisons of HFCVD diamond nucleation and growth using different carbon sources

Cited by 24 publications

References 36 publications

Influence of modified carbon substrate on boron doped ultrananocrystalline diamond deposition

Influence of modified carbon substrate on boron doped ultrananocrystalline diamond deposition

Growth rate and surface free energy of diamond films using different gas-sources

Novel Diamond Films Synthesis Strategy: Methanol and Argon Atmosphere by Microwave Plasma CVD Method Without Hydrogen

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