Comparisons of magnetic defects and coercive forces for Co/Si(100) and Co/rubrene/Si(100)

Abstract

<p>A schematic plot elucidating the effects of the enhanced film quality and reducing defect density by inserting rubrene on the enlargement of the magnetic domains as well as the reduced coercive force.</p>

Self-assembled magnetic heterostructure of Co/DLC films

“…In 3 C which are calibrated and consistent to previous report [36][37][38][39][40]. To find more evidence of the superstructure as Co/Co carbide/DLC, the XRD measurements for Co deposited on DLC films are shown in figure 6.…”

“…The thickness of DLC and Co films are determined by measuring the edge heights of the Co layer prepared by acetone removal of the pre-covered plastic glue using atomic force microscopy (AFM, Bruker Innova). For example, a schematic plot and topographic image of 20 nm Co/Si shows the edge height of the Co layer in figure 3 [38].…”

Structural characterization and electronic properties of Ni/rubrene bilayers with alternative stacking sequences

“…The average crystallite size ( D ) of a crystallite of a material can be determined by peak broadening as D = kλ / β cos θ ;where λ is the wavelength of X-ray; β is the full width at half maximum (FWHM) of the Bragg peak; θ refers to the diffraction angle; and k is the Scherrer constant with a value of 0.90. 36,46 From the analysis of the prominent peak of Ni(111) in Fig. 2 using Lorentzian fitting, FWHM values were obtained.…”

“…The specimens used in this study were prepared in an ultrahigh vacuum chamber with an ultimate pressure of 5 Â 10 À10 Torr. 36,37 Si(100) substrates were ultrasonically cleaned using acetone and methanol before being loaded into the chamber. Ni overlayers were prepared from a Ni target with 99.99% purity by RF magnetron sputtering using argon (99.9995% purity) as the sputtering gas.…”

Impact of a rubrene buffer layer on the dynamic magnetic behavior of nickel layers on Si(100)

“…Ni/rubrene bilayers and Ni single layers were grown on Si(100) substrates in an ultrahigh vacuum chamber with an ultimate pressure of 5 Â 10 À10 torr. [40][41][42] Before being loaded into the chamber, the Si(100) substrates were ultrasonically cleaned using acetone and methanol. Rubrene was evaporated at an elevated temperature of 288 1C from an Al 2 O 3 crucible with a Ktype thermocouple that was adhered on the wall of the crucible.…”