Comparisons of polarization switching in “hard,” “soft,” and relaxor ferroelectrics

Abstract

Articles you may be interested inElectric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals J. Appl. Phys. 116, 113911 (2014) The dynamics of polarization switching have been investigated over extremely broad time (10 Ϫ8 ϽtϽ10 2 s) and field ranges for hard, soft, and relaxor ferroelectrics based on aliovalent modified Pb(Zr 1Ϫx Ti x )O 3 . The results unambiguously demonstrate important differences in the polarization switching mechanism for these various types of ferroelectrics.

Super-coercive electric field hysteresis in ferroelectric plastic crystal tetramethylammonium bromotrichloroferrate(iii)

“…Hysteresis asymmetry is common among materials referred to as "hard" ferroelectrics, such as Fe doped Pb(Zr,Ti)O3 and BiFeO3, and is usually caused by defect pinning. [61][62][63][64][65] Defect pinning is the result of point defects being distributed to produce an internal bias field that interferes with domain wall movement. 49 The hysteresis asymmetry is usually most apparent before a saturated domain switching state is reached and can change over time and number of electric field cycles, depending on the mobility of the point defects.…”

Interrelationship between phase transition characteristics and piezoelectric response in lead lanthanum zirconate titanate relaxor ceramics

“…, on the A-site of the perovskite structure, contributes to enhance such relaxor characteristics [24,25]. The lanthanum-modified lead zirconate titanate Pb 1-3x/2 La x (Zr 1-y Ti y )O 3 (PLZT) ferroelectric system is one of the most interesting materials to be studied from the fundamental and application point of view, especially for compositions near the MPB region [26]. They exhibit a great variety of physical behaviour and excellent electromechanical properties, thus making the material suitable for actuator and sensor applications [27].…”