Comparitive Ionization Energies for Protons, Deuterons and Alpha Particles in High Purity Germanium and Si(Li) Nuclear Radiation Detectors

Martini, Mario; Raudorf, T. W.; Stott, W. R.; Waddington, J. C.

doi:10.1109/tns.1975.4327632

Cited by 17 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The result of this fitting procedure is summarized in Fig. 4b and provides the dead layer thickness d=(1.00.2) m; the sensitivity of the electronic chain is (2.300  0.002) keV/channel corresponding to 640 electrons/channel as evaluated assuming an average energy to create one electron/hole pair (eh) in silicon of 3.6 eV [25].…”

Section: Calibration and Dead Layer Measurementmentioning

confidence: 99%

Polychromatic angle resolved IBIC analysis of silicon power diodes

Pezzarossa

Cepparrone

Cosic

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

Section: Calibration and Dead Layer Measurementmentioning

confidence: 99%

Polychromatic angle resolved IBIC analysis of silicon power diodes

Pezzarossa

Cepparrone

Cosic

et al. 2021

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

“…where ε np is the average energy required to create electron/hole pairs (in silicon 3.6 eV, [71]), E I is the energy of the ion probe, and dx dE I is the relevant ionization energy loss that can be extracted from SRIM simulations, as shown in Fig. 25 for the ions used.…”

Section: Ibic Characterization Of a Partly Damaged Sc Diode -A New Mo...mentioning

confidence: 99%

“…Experimental techniques like Deep Level Transient Spectroscopy (DLTS) are limited to characterisation of the single carrier traps and determination of the single carrier capture coefficient (either electron or hole; c n = c p or vice versa). In this case relation(71) simplifies to:…”

mentioning

confidence: 99%

Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion

Pastuović

Ionescu

Vittone

et al. 2016

SSP

View full text Add to dashboard Cite

Accelerator-based nuclear techniques are an important tool for the modification and characterization of surfaces in general, down to a depth of around one micrometer. For oxide semiconductors used in solar energy conversion, the surface plays a critical role in facilitating the use of solar photon energy to obtain hydrogen via spontaneous water oxidation. For such a process, the required surface properties are complex and include specific chemical composition, as well as the defect composition, and both of these characteristics may be augmented using accelerator-based nuclear techniques. The targeted modification of surfaces makes use of ion implantation for changing the chemical composition, and ion irradiation for changing the defect structure. The defect formation is a very complex process, and in this work we placed more emphasis on this aspect. We attempted to present the defect formation under the irradiation of ion beams at the two extremes: formation of extensive and large-scale cluster defects; and formation of small-scale point defects. In addition, we review the main characterization techniques based on ion beams, with examples from work carried out on semiconductors and oxide semiconductors.

show abstract

High Frame-Rate Neutron Radiography of Dynamic Events

Bossi

Robinson

Barton

1983

Neutron Radiography

View full text Add to dashboard Cite

A system has been developed to perform neutron radio graphic analysis of dynamic events having a duration of several milliseconds. The system has been operated in the range of 2000 to 10,000 frames/second. Synchronization has provided high-speed-motion neutron radiographs for evaluation of the firing cycle of 7.62 mm munition rounds within a steel rifle barrel. The system has also been used to demonstrate the ability to produce neutron radio graphic movies of two phase flow. The equipment uses the Oregon State University TRIGA reactor capable of pulsing to 3000 MW peak power, a neutron beam collimator, a scintillator neutron conversion screen coupled to an image intensifier, and a 16 mm high speed movie camera. The peak neutron flux incident at the object position is approximately 4 x 10 n n/cm 2 s with a pulse, full width at half maximum, of 9 ms. Special studies have'been performed on the scintillator conversion screens and on the effects of statistical limita^ tions on the image quality. Modulation transfer function analysis has been used to assist in the evaluation of the system performance.

show abstract

Comparitive Ionization Energies for Protons, Deuterons and Alpha Particles in High Purity Germanium and Si(Li) Nuclear Radiation Detectors

Cited by 17 publications

References 4 publications

Polychromatic angle resolved IBIC analysis of silicon power diodes

Polychromatic angle resolved IBIC analysis of silicon power diodes

Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion

High Frame-Rate Neutron Radiography of Dynamic Events

Contact Info

Product

Resources

About