Compensating defect in deep buried layers produced by MeV heavy ions in n-silicon

Abstract

Buried damaged layers in n-silicon created by implantation of MeV heavy ions (Ar+) have been studied by capacitance and current measurements, and spectroscopic techniques such as deep level transient spectroscopy and constant capacitance time analyzed transient spectroscopy. We have isolated a new midgap acceptor level responsible for carrier compensation in samples irradiated with doses below amorphization threshold. This defect level is demonstrated to control hysteresis in capacitance-voltage characteristics, space charge limited current conduction, and premature termination of emission transients. The emission energy of the defect is observed to be sensitive to degree of disorder in the damaged layer controlled by irradiation dose, and relaxation induced by heat treatment.

DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor

“…The activation energies in eV are determined to an accuracy of third decimal place. The defects identified and named in Table 2 are well characterized in the literature [10,11,[20][21][22][23][24]. As can be seen from Table 2, the activation energies of few defect types do not change while the activation energies of few other defects increase as the ion fluence increases.…”

“…The levels EF1, ED2, ED3 and EC2 with energies 0.237 eV, 0.417 eV, 0.458 eV and 0.451 eV, respectively are attributed to di-vacancies [10,[20][21][22]. The levels EC3 and EF3 with energies 0.591 eV and 0.551 eV are identified as D-centers [23,24]. The type and nature of the defects generated by ionizing radiation depend on energy and fluence.…”

An investigation of electron and oxygen ion damage in Si npn RF power transistors

“…These are the major heavy ion induced defects in SiO 2 . The effect of heavy ion irradiation on n/p-type silicon has also been studied extensively, and different types of defects have been observed (16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31). The high-energy ion irradiation introduces point defects into silicon, predominantly divacancies and vacancy impurity complexes.…”

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

“…Figure 5 exhibits the Arrhenius plots of deep-level defects for three different ion fluences. The identification of the defect type is made on the basis of its finger prints such as activation energy, annealing temperature and capture cross section by comparing with those reported in the literature (19)(20)(21)(22)(23)(24)(25)(26)(27)(28). The capture cross section values of the different deep-level defects are calculated by analyzing Arrhenius plots ( Figure 5) and are tabulated in Table 2 The total defect concentration is found to increase with the ion fluence (the values are tabulated in Table 2).…”