Compensating impurity effect on epitaxial regrowth rate of amorphized Si

Suni, I.; Göltz, G.; Grimaldi, M. G.; Nicolet, M.‐A.; Lau, S. S.

doi:10.1063/1.93034

Cited by 126 publications

(33 citation statements)

References 9 publications

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“…This can be attributed to an increase in the grain growth rate by the presence of solute atoms ͑n-and p-type͒. 32,33 Suni et al 32 hypothesized that the SPE growth rate is related to the concentration of charged vacancies residing in the crystal, where the vacancy concentration is determined by the position of the Fermi energy level, which in turn can be tailored by the doping concentration. Park et al 33 proposed a mechanism based on the solute-induced reduction of the bond strength, which facilitates the bond-breaking ͑formation͒ process, resulting in the thermal generation of dangling bonds at the crystalline/amorphous interface during recrystallization.…”

Section: Discussionmentioning

confidence: 99%

Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

Hakim

Ashburn

2007

J. Electrochem. Soc.

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We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing ͑500°C͒. Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range 40-200 nm, annealed at a temperature of 500 or 550°C. A comparison is made of crystallization arising from Ge and SiGe layers and the role of damage from a high-dose fluorine implant is investigated. Plan-view scanning electron microscope images show that perimeter crystallization is only present in amorphous silicon films with thicknesses ഛ100 nm, and that the crystallization width increases with decreasing film thickness and increasing doping level. Cross-sectional scanning electron microscope images show that the perimeter crystallization originates from grains at the bottom of the amorphous silicon film. The perimeter crystallization phenomenon disappears when the amorphous silicon is implanted with fluorine and when an Si 80% Ge 20% layer is employed instead of germanium. The perimeter crystallization is due to the formation of large grains as a result of an increased growth rate of pre-existing grains and this is attributed to the strain generated by the thermal expansion of the germanium layer during anneal. The crystallization of amorphous silicon ͑␣-Si͒ has been intensively investigated for application in active-matrix flat-panel displays and 3D electronics.1-10 Several techniques have been studied for the fabrication of high-quality polycrystalline silicon ͑poly-Si͒ with large crystallite size, low grain-boundary defect density, and high carrier velocity. These include excimer laser crystallization ͑ELC͒, 1-3 solid-phase crystallization ͑SPC͒, 4,5 metal-induced crystallization ͑MIC͒, 6,7 and metal-induced lateral crystallization ͑MILC͒. [8][9][10] This latter approach has the advantage of giving good control over the location of the grain boundaries but the disadvantage of introducing metal contamination into the ␣-Si, with deleterious effects on transistor performance. 11Germanium has also been proposed as a seeding agent for the lateral crystallization of ␣-Si 12,13 because of its better compatibility with scaled complementary metal oxide semiconductor ͑CMOS͒ technology. The lower melting point of germanium than silicon was reported to reduce the incubation time for the crystallization of the underlying amorphous silicon film by the formation of a SiGe layer at the Ge-Si interface.12,13 Improved values of mobility were obtained for thin-film transistors fabricated in ␣-Si layers crystallized using a germanium seed. 12,13 In a previous article, we reported a new low-temperature ͑500°C͒ ␣-Si crystallization phenomenon that occurs at the perimeter of a Ge layer grown on ␣-Si through a window in a SiO 2 layer.14 This phenomenon was termed perimeter crystallization and the results suggested the presence of an additional crystallization mechanism in the early stages of the crystallization process. Perimeter c...

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Section: Discussionmentioning

confidence: 99%

Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

Hakim

Ashburn

2007

J. Electrochem. Soc.

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“…The influence of impurities on the recrystallization rate of amorphous Si has been intensively investigated in the past. In a certain concentration range, electrically active elements like B and P are known to have an increasing effect [3,4,5] on the SPER (solid-phase epitaxial regrowth) rate whereas the elements C, N, and O can retard it [6]. The recrystallization behavior of silicon amorphized by implantation of Rb and Cs has not been investigated so far.…”

Section: Introductionmentioning

confidence: 99%

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

Maier

Häublein

Ryssel

et al. 2012

AIP Conference Proceedings

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Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method Appl. Phys. Lett. 101, 122102 (2012) A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process J. Appl. Phys. 112, 064302 (2012) Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap J. Appl. Phys. 112, 054909 (2012) Additional information on AIP Conf. Proc. Abstract. The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

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“…Recently, Suni et al,20 found that compensated layers with equal concentrations of B and P or B and As showed a strong decrease in the regrowth rate whereas for the layers with overlapping As and P profiles no compensation was found. According to this relationship, at low temperature U is approximately independent of ~g (impurity concentration).…”

Section: The Kinetics Of the Regrowth Processmentioning

confidence: 99%

Model of amorphous-silicon-layer regrowth

Ling¹

1983

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Compensating impurity effect on epitaxial regrowth rate of amorphized Si

Cited by 126 publications

References 9 publications

Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

Model of amorphous-silicon-layer regrowth

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