Compensation effects in Mg-doped GaN epilayers

Eckey, L.; Holst, J.; Hoffmann, A.; Schineller, B.; Heime, K.; Heuken, M.; Schön, Oliver; Beccard, R.

doi:10.1016/s0022-0248(98)00344-3

Cited by 39 publications

(27 citation statements)

References 6 publications

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“…In heavily Mg doped GaN a broad photoluminescence (PL) band around 2.6-2.95 eV (referred hereafter as the 2.8 eV band) dominates the PL spectrum [1][2][3][4][5][6][7][8][9][10][11] . The nature of the defect responsible for this band and even the type of optical transitions involved remain unclear.…”

Section: Introductionmentioning

confidence: 99%

“…Up to now there is no definite evidence supporting one particular model. The main distinguishing feature of the 2.8 eV band, a large blue shift with increasing excitation intensity, may be explained by several models [5][6][7][8] . In the donor-acceptor pair (DAP) model, the shift is attributed to saturation of emission from distant DAP due to their longer lifetime 7,8 .…”

Section: Introductionmentioning

confidence: 99%

“…The main distinguishing feature of the 2.8 eV band, a large blue shift with increasing excitation intensity, may be explained by several models [5][6][7][8] . In the donor-acceptor pair (DAP) model, the shift is attributed to saturation of emission from distant DAP due to their longer lifetime 7,8 . Alternatively, formation of impurity bands 5,6 or potential fluctuations 6 have been considered as possible reasons for the observed shift.…”

Section: Introductionmentioning

confidence: 99%

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Defect Luminescence in Heavily Mg Doped GaN

Reshchikov

Wessels

1999

MRS Internet j. nitride semicond. res.

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Behavior of the photoluminescence band at about 2.8 eV in heavily Mg doped GaN has been studied at different temperatures and excitation intensities. The 2.8 eV band is attributed to donor-acceptor transitions involving a Mg acceptor. The large blue shift of the band with increasing excitation intensity is explained by variation in the contribution of close and distant pairs to the luminescence. The red shift of the band with increasing temperature under high excitation intensity conditions results from thermal release of carriers from close pairs. The thermal activation energy of the deep donor, about 0.4 eV, is determined from the quenching of the 2.8 eV luminescence band at high temperatures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Defect Luminescence in Heavily Mg Doped GaN

Reshchikov

Wessels

1999

MRS Internet j. nitride semicond. res.

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“…2). The nature of this deeper transition band is unknown, however, it indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes at high Mg flux like in h-GaN [10].…”

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confidence: 99%

Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers

1998

phys. stat. sol. (b)

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Mg doping of cubic GaN epilayers grown by rf plasma-assisted molecular beam epitaxy on (100) GaAs is investigated by secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and Hall-effect measurements. SIMS measurements show that the amount of incorporation of Mg saturates and is limited to a value of about 5 Â 10 18 cm ± ±3 at substrate temperatures of 720 C. Besides a shallow acceptor level at E A 0.230 eV PL spectra reveal an additional Mg-related deeper defect band indicating an incorporation of Mg at off gallium sites or as complexes. The thermal activation energy of the shallow Mg acceptor is measured by temperature dependent Hall effect to be 0.110 eV.

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“…Magnesium incorporation is accompanied by the formation of considerable amounts of intrinsic and extrinsic defects. Clearly, the incorporation of such centers has a significant effect on the electrical and luminescent properties of GaN:Mg [55]. Low temperature photoluminescence spectra of Mg-doped GaN films show broad emission bands in the range 2.8-3.3 eV, due to donor recombination [56,57].…”

Section: Gan Nanostructured Materials Dopingmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Compensation effects in Mg-doped GaN epilayers

Cited by 39 publications

References 6 publications

Defect Luminescence in Heavily Mg Doped GaN

Defect Luminescence in Heavily Mg Doped GaN

Electrical and Optical Properties of Mg Doped MBE Grown Cubic GaN Epilayers

Review of GaN Nanostructured Based Devices

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