Compensation in boron‐doped CVD diamond

Gabrysch, Markus; Majdi, Saman; Hallén, Anders; Linnarsson, Margareta K.; Schöner, Adolf; Twitchen, Daniel J.; Isberg, Jan

doi:10.1002/pssa.200879711

Cited by 34 publications

(29 citation statements)

References 13 publications

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“…The calculated hole mobility profile versus

N_{A}

and

N_{D}

is compared to the experimental data reported by different authors . A good agreement is obtained except for a few data where two kinds of discrepancies appeared: a lower mobility than the theoretical calculations (for example values with

N_{D} = 10^{17} {cm}^{- 3}

reported by Werner et al.…”

Section: Electrical Properties Of Boron Doped Diamond (P‐type)supporting

confidence: 52%

“…The calculated hole mobility profile versus N A and N D is compared to the experimental data reported by different authors [24][25][26][27][28]. A good agreement is obtained except for a few data where two kinds of discrepancies appeared: a lower mobility than the theoretical calculations (for example values with N D = 10 17 cm −3 reported by Werner et al [27]) and sometimes a higher experimental value than the theoretical one (as example values with N D = 7 × 10 18 cm −3 reported by Werner et al [27]).…”

Section: Hole Mobility Versus N a And N Dmentioning

confidence: 99%

“…StatusSolidi A 213, No. 8 (2016) 2039 Calculated p-type diamond resistivity as function of acceptor concentration and compensation at 300 and 500 K. The symbols are experimental data reported by: Barjon et al[24], Volpe et al[25], Gabrysch et al[26], Werner et al[27], and Tsukioka et al[28].…”

mentioning

confidence: 99%

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Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond

Traoré

Koizumi

Pernot

2016

Physica Status Solidi (a)

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We report an exhaustive description of electrical properties of mono‐crystalline diamond epilayers doped with boron and phosphorus impurities. Carrier density, carrier mobility, and resistivity have been calculated for boron and phosphorus doped diamond as a function doping level and a compensation for values ranging between 1014 and 1020thinmathspacecm−3 at two different temperatures of 300 and 500 K. The calculated values are graphically compared with experimental data from the literature and discussed in terms of device performances. Finally, an example of use of the graphics is given by comparing the IV characteristics of the first pn diamond junction with our calculations. Theoretical hole mobility as function of acceptor concentration and compensation at 300 and 500 K. The symbols are experimental data from references given in the text.

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“…The calculated hole mobility profile versus

N_{A}

and

N_{D}

N_{D} = 10^{17} {cm}^{- 3}

reported by Werner et al.…”

Section: Electrical Properties Of Boron Doped Diamond (P‐type)supporting

confidence: 52%

Section: Hole Mobility Versus N a And N Dmentioning

confidence: 99%

See 1 more Smart Citation

Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond

Traoré

Koizumi

Pernot

2016

Physica Status Solidi (a)

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“…Astonishingly, only very few reports on Seebeck coefficients in boron-doped CVD-diamond can be found in the literature, and no reports show data below 250 K or above 350 K [7,[16][17][18]. A recent theoretical approach [19] calculates Seebeck coefficients from experimental Hall and resistivity data in a p-type CVD-single-crystal [20]. Mainly older sources use the Seebeck effect in order to confirm p-type conduction [14,[21][22][23].…”

Section: Thermoelectric Transport In Cvd Diamondmentioning

confidence: 95%

Thermoelectric transport properties of boron-doped nanocrystalline diamond foils

Engenhorst

Fecher

Notthoff

et al. 2015

Carbon

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A B S T R A C TNatural diamond is known for its outstanding thermal conductivity and electrical insulation. However, synthetic production allows for doping and tailoring microstructural and transport properties. Despite some motivation in the literature and the ongoing search for abundant and non-toxic thermoelectric materials, the first experimental study on a set of eight substrate-free boron-doped nanocrystalline diamond foils is presented herein.All transport coefficients were determined in the same direction within the same foils over a broad temperature range up to 900°C. It is found that nanostructuring reduces the thermal conductivity by two orders of magnitude, but the mobility decreases significantly to around 1 cm 2 V À1 s À1 , too. Although degenerate transport can be concluded from the temperature dependence of the Seebeck coefficient, charge carriers notably scatter at grain boundaries where sp 2 -carbon modifications and amorphous boron-rich phases form during synthesis. A detailed analysis of doping efficiency yields an acceptor fraction of only 8-18 at%, meaning that during synthesis excess boron thermodynamically prefers electrically inactive sites. Decent power factors above 10 À4 W m À1 K À2 at 900°C are found despite the low mobility, and a Jonker-type analysis grants a deeper insight into this issue.Together with the high thermal conductivity, the thermoelectric figure of merit zT does not exceed 0.01 at 900°C.

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“…These require the concentrations of both carriers to exceed 10 15 cm −3 in order to be as fast at the transition from the excited to the ground level of the color center. However, such high free carrier concentrations are hardly achievable at room temperature due to the high ionization energies of donors and acceptors [37,38] and strong compensation effects in diamond [37][38][39][40], which are especially pronounced for electrons [37,39,40]. In addition, non-equilibrium carrier concentrations in the active region of the semiconductor device operating under electrical injection are typically lower than the equilibrium majority-carrier concentrations in the bulk [41].…”

Section: Recombination At the Color Center And Photon Emissionmentioning

confidence: 99%

Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures

Fedyanin

Agio

2016

New J. Phys.

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The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources. However, the reported emission rates are far off what can be achieved by state-of-the-art electrically driven epitaxial quantum dots. Since the electroluminescence mechanism has not yet been elucidated, it is not clear to what extent the emission rate can be increased. Here we develop a theoretical framework to study single-photon emission from color centers in diamond under electrical pumping. The proposed model comprises electron and hole trapping and releasing, transitions between the ground and excited states of the color center as well as structural transformations of the center due to carrier trapping. It provides the possibility to predict both the photon emission rate and the wavelength of emitted photons. Self-consistent numerical simulations of the single-photon emitting diode based on the proposed model show that the photon emission rate can be as high as 100 kcounts s-1 at standard conditions. In contrast to most optoelectronic devices, the emission rate steadily increases with the device temperature achieving of more than 100 Mcount s-1 at 500 K, which is highly advantageous for practical applications. These results 2 demonstrate the potential of color centers in diamond as electrically driven non-classical light emitters and provide a foundation for the design and development of single-photon sources for optical quantum computation and quantum communication networks operating at room and higher temperatures.

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Compensation in boron‐doped CVD diamond

Cited by 34 publications

References 13 publications

Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond

Effect of n‐ and p‐type doping concentrations and compensation on the electrical properties of semiconducting diamond

Thermoelectric transport properties of boron-doped nanocrystalline diamond foils

Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures

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