2016
DOI: 10.3390/mi7060095
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Compensation Method for Die Shift Caused by Flow Drag Force in Wafer-Level Molding Process

Abstract: Wafer-level packaging (WLP) is a next-generation semiconductor packaging technology that is important for realizing high-performance and ultra-thin semiconductor devices. However, the molding process, which is a part of the WLP process, has various problems such as a high defect rate and low predictability. Among the various defect factors, the die shift primarily determines the quality of the final product; therefore, predicting the die shift is necessary to achieve high-yield production in WLP. In this study… Show more

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Cited by 19 publications
(5 citation statements)
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“…Yeon et al, [22] studied the die shift for WLP using compression molding. Die shift was found as the major defects which prevented high yield production.…”
Section: Molding Process For Cspmentioning
confidence: 99%
“…Yeon et al, [22] studied the die shift for WLP using compression molding. Die shift was found as the major defects which prevented high yield production.…”
Section: Molding Process For Cspmentioning
confidence: 99%
“…Yeon et al analyzed the warpage according to the gap between silicon chips in wafer-level packaging. In addition, they analyzed the effect on the silicon chip movement . Su et al analyzed the warpage of the thickness and area ratio of the Si chip/EMC mold in a panel-level package .…”
Section: Introductionmentioning
confidence: 99%
“…In addition, they analyzed the effect on the silicon chip movement. 16 Su et al analyzed the warpage of the thickness and area ratio of the Si chip/EMC mold in a panellevel package. 17 However, this trial-error analysis is both cost and time-consuming because the warpage tendency varies according to the material properties, package size, and geometries.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon wafers are widely used in the fabrication process of integrated circuits (IC) and MEMS devices [ 1 , 2 ]. The wafer residual stress is remarkable for the following reasons: The thin pancake-like shape of the wafer, the multiple-layer structure with a different coefficient of thermal expansion (CTE), and the high-temperature fabrication process such as thermal oxidation, hard bake of photoresist, annealing and bonding process [ 3 , 4 , 5 , 6 , 7 ]. The combined effects of the induced residual stresses acting on the backside and frontside of the wafer result in wafer warpage [ 8 ].…”
Section: Introductionmentioning
confidence: 99%