Compensation of hole conductivity in CdTe crystals doped with Cr

Abstract

We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity leads to the introduction of deep donors with Е v + 0.19…0.32 eV.

Influence of Cr doping on optical and photoluminescent properties of CdTe

“…The higher Cr impurity concentration at the beginning of the ingot can be caused by the concentrated overcooling at the crystallization front. Thereby, the absorption edge shift to the longwave region with the increasing dopant concentration well correlates with the reported data [4,5].…”

“…It indicates a complex nature of Cr-induced defects, the transitions to which is the reason of origin of the mentioned PL. The obtained results are well correlated with the reported results [5]. The authors of this work had determined the existence of deep level for the CdTe:Cr crystals with different impurity concentration, responsible for the equilibrium conductivity within the energy range E v +(0.19-0.32) еV.…”