Two-dimensional semiconductor materials
with vertical dipoles are
promising photocatalysts as vertical dipoles not only promote the
electron–hole separation but also enhance the carrier redox
ability. However, the influence of vertical dipoles on carrier recombination
in such materials, especially the competing relationship between vertical
dipoles and band gaps, is not yet clear. Herein, first-principles
calculations and nonadiabatic molecular dynamics simulations were
combined to clarify the influence of band gap and vertical dipole
on the carrier lifetime in Janus MoSSe monolayer. By comparing with
the results of MoS2 and MoSe2 as well as exploring
the carrier lifetime of MoSSe under strain regulation, it has been
demonstrated that the vertical dipole, rather than the band gap, is
the dominant factor affecting the carrier lifetime. Strikingly, a
linear relationship between the carrier lifetime and vertical dipole
is revealed. These findings have important implications for the design
of high-performance photocatalysts and optoelectronic devices.